In-situ characterization of 2D potential distributions in biased Si n+-p junctions using off-axis electron holography

M. Han; T. Hirayama; David Smith; Martha McCartney

doi:10.1017/S1431927608082378

In-situ characterization of 2D potential distributions in biased Si n+-p junctions using off-axis electron holography

M. Han, T. Hirayama, David Smith, Martha McCartney

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	400-401
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	14
Issue number	SUPPL. 2
DOIs	https://doi.org/10.1017/S1431927608082378
State	Published - Aug 2008

ASJC Scopus subject areas

Instrumentation

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title = "In-situ characterization of 2D potential distributions in biased Si n+-p junctions using off-axis electron holography",

author = "M. Han and T. Hirayama and David Smith and Martha McCartney",

year = "2008",

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pages = "400--401",

journal = "Microscopy and Microanalysis",

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publisher = "Cambridge University Press",

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T1 - In-situ characterization of 2D potential distributions in biased Si n+-p junctions using off-axis electron holography

AU - Han, M.

AU - Hirayama, T.

AU - Smith, David

AU - McCartney, Martha

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SN - 1431-9276

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SP - 400

EP - 401

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

IS - SUPPL. 2

ER -

In-situ characterization of 2D potential distributions in biased Si n+-p junctions using off-axis electron holography

ASJC Scopus subject areas

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