In situ biasing of tapered Si-Ge nw heterojunctions using off-axis electron holography

Z. Gan, D. Perea, Y. He, R. Colby, M. Gu, Y. Jinkyoung, C. Wang, S. T. Picraux, David Smith, Martha McCartney

Research output: Contribution to journalArticle

Original languageEnglish (US)
Pages (from-to)256-257
Number of pages2
JournalMicroscopy and Microanalysis
Volume20
Issue number3
DOIs
StatePublished - Aug 1 2014

ASJC Scopus subject areas

  • Instrumentation

Cite this

In situ biasing of tapered Si-Ge nw heterojunctions using off-axis electron holography. / Gan, Z.; Perea, D.; He, Y.; Colby, R.; Gu, M.; Jinkyoung, Y.; Wang, C.; Picraux, S. T.; Smith, David; McCartney, Martha.

In: Microscopy and Microanalysis, Vol. 20, No. 3, 01.08.2014, p. 256-257.

Research output: Contribution to journalArticle

Gan, Z. ; Perea, D. ; He, Y. ; Colby, R. ; Gu, M. ; Jinkyoung, Y. ; Wang, C. ; Picraux, S. T. ; Smith, David ; McCartney, Martha. / In situ biasing of tapered Si-Ge nw heterojunctions using off-axis electron holography. In: Microscopy and Microanalysis. 2014 ; Vol. 20, No. 3. pp. 256-257.
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