In-Plane Transport Properties of Si/Si1-xGexStructure and its FET Performance by Computer Simulation

Toshishige Yamada, Jing Rong Zhou, H. Miyata, David K. Ferry

Research output: Contribution to journalArticlepeer-review

75 Scopus citations

Abstract

Transport properties of ungated Si/Si1-xGex, are studied by an ensemble Monte Carlo technique. The device performance is studied with a quantum hydrodynamic equation method using the Monte Carlo results. The phonon-scattering-limited mobility is enhanced over bulk Si, and is found to reach 23000 cm2/Vs at 77 K and 4000cm2/Vs at 300 K. The saturation velocity is increased slightly compared with the bulk value at both temperatures. A significant velocity overshoot, several times larger than the saturation velocity, is also found. In a typical modulation-doped field-effect-transistor, the calculated transcon-ductance for a 0.18 μm gate device is found to be 300 mS/mm at 300 K. Velocity overshoot in the strained Si channel is observed, and is an important contribution to the transconductance. The inclusion of the quantum correction increases the total current by as much as 15%.

Original languageEnglish (US)
Pages (from-to)1513-1522
Number of pages10
JournalIEEE Transactions on Electron Devices
Volume41
Issue number9
DOIs
StatePublished - Sep 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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