In-Plane Transport Properties of Si/Si1-xGexStructure and its FET Performance by Computer Simulation

Toshishige Yamada; Jing Rong Zhou; H. Miyata; David K. Ferry

doi:10.1109/16.310101

In-Plane Transport Properties of Si/Si1-xGexStructure and its FET Performance by Computer Simulation

Toshishige Yamada, Jing Rong Zhou, H. Miyata, David K. Ferry

Research output: Contribution to journal › Article › peer-review

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Abstract

Transport properties of ungated Si/Si1-xGex, are studied by an ensemble Monte Carlo technique. The device performance is studied with a quantum hydrodynamic equation method using the Monte Carlo results. The phonon-scattering-limited mobility is enhanced over bulk Si, and is found to reach 23000 cm2/Vs at 77 K and 4000cm2/Vs at 300 K. The saturation velocity is increased slightly compared with the bulk value at both temperatures. A significant velocity overshoot, several times larger than the saturation velocity, is also found. In a typical modulation-doped field-effect-transistor, the calculated transcon-ductance for a 0.18 μm gate device is found to be 300 mS/mm at 300 K. Velocity overshoot in the strained Si channel is observed, and is an important contribution to the transconductance. The inclusion of the quantum correction increases the total current by as much as 15%.

Original language	English (US)
Pages (from-to)	1513-1522
Number of pages	10
Journal	IEEE Transactions on Electron Devices
Volume	41
Issue number	9
DOIs	https://doi.org/10.1109/16.310101
State	Published - Sep 1994

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{244eec31463b476c83dc42f25d50a98d,

title = "In-Plane Transport Properties of Si/Si1-xGexStructure and its FET Performance by Computer Simulation",

abstract = "Transport properties of ungated Si/Si1-xGex, are studied by an ensemble Monte Carlo technique. The device performance is studied with a quantum hydrodynamic equation method using the Monte Carlo results. The phonon-scattering-limited mobility is enhanced over bulk Si, and is found to reach 23000 cm2/Vs at 77 K and 4000cm2/Vs at 300 K. The saturation velocity is increased slightly compared with the bulk value at both temperatures. A significant velocity overshoot, several times larger than the saturation velocity, is also found. In a typical modulation-doped field-effect-transistor, the calculated transcon-ductance for a 0.18 μm gate device is found to be 300 mS/mm at 300 K. Velocity overshoot in the strained Si channel is observed, and is an important contribution to the transconductance. The inclusion of the quantum correction increases the total current by as much as 15%.",

author = "Toshishige Yamada and Zhou, {Jing Rong} and H. Miyata and Ferry, {David K.}",

note = "Funding Information: Manuscript received November 8, 1993; revised May 31, 1994. The review of this paper was arranged by Associate Editor A. H. Marshak. This work supported in part by the Office of Naval Research and the Army Research Office. T. Yamada, J.-R. Zhou, and D. K. Ferry are with the Center for Solid State Elcctronics Research, Arizona State University, Tempe, AZ 85287-6206 USA. H. Miyata is with Fujitsu Ltd., Kawasaki, Japan. IEEE Log Number 9403887.",

year = "1994",

month = sep,

doi = "10.1109/16.310101",

language = "English (US)",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Yamada, Toshishige

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AU - Miyata, H.

AU - Ferry, David K.

N1 - Funding Information: Manuscript received November 8, 1993; revised May 31, 1994. The review of this paper was arranged by Associate Editor A. H. Marshak. This work supported in part by the Office of Naval Research and the Army Research Office. T. Yamada, J.-R. Zhou, and D. K. Ferry are with the Center for Solid State Elcctronics Research, Arizona State University, Tempe, AZ 85287-6206 USA. H. Miyata is with Fujitsu Ltd., Kawasaki, Japan. IEEE Log Number 9403887.

PY - 1994/9

Y1 - 1994/9

N2 - Transport properties of ungated Si/Si1-xGex, are studied by an ensemble Monte Carlo technique. The device performance is studied with a quantum hydrodynamic equation method using the Monte Carlo results. The phonon-scattering-limited mobility is enhanced over bulk Si, and is found to reach 23000 cm2/Vs at 77 K and 4000cm2/Vs at 300 K. The saturation velocity is increased slightly compared with the bulk value at both temperatures. A significant velocity overshoot, several times larger than the saturation velocity, is also found. In a typical modulation-doped field-effect-transistor, the calculated transcon-ductance for a 0.18 μm gate device is found to be 300 mS/mm at 300 K. Velocity overshoot in the strained Si channel is observed, and is an important contribution to the transconductance. The inclusion of the quantum correction increases the total current by as much as 15%.

AB - Transport properties of ungated Si/Si1-xGex, are studied by an ensemble Monte Carlo technique. The device performance is studied with a quantum hydrodynamic equation method using the Monte Carlo results. The phonon-scattering-limited mobility is enhanced over bulk Si, and is found to reach 23000 cm2/Vs at 77 K and 4000cm2/Vs at 300 K. The saturation velocity is increased slightly compared with the bulk value at both temperatures. A significant velocity overshoot, several times larger than the saturation velocity, is also found. In a typical modulation-doped field-effect-transistor, the calculated transcon-ductance for a 0.18 μm gate device is found to be 300 mS/mm at 300 K. Velocity overshoot in the strained Si channel is observed, and is an important contribution to the transconductance. The inclusion of the quantum correction increases the total current by as much as 15%.

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In-Plane Transport Properties of Si/Si1-xGexStructure and its FET Performance by Computer Simulation

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