Abstract
In-plane anisotropy of layered materials adds another dimension to their applications, opening up avenues in diverse angle-resolved devices. However, to fulfill a strong inherent in-plane anisotropy in layered materials still poses a significant challenge as it often requires a low-symmetry nature of layered materials. Here, we report the fabrication of a member of layered semiconducting AIIIBVI compounds TlSe which possesses a low-symmetry tetragonal structure, and investigate its anisotropic light-matter interactions. We first identify the in-plane Raman-intensity anisotropy of thin-layer TlSe, offering unambiguous evidence that the anisotropy is sensitive to crystalline orientation. Further in-situ azimuth-dependent reflectance difference microscopy enables to directly evaluate in-plane optical anisotropy of layered TlSe and we demonstrate that the TlSe shows a linear dichroism under polarized absorption spectra arising from in-plane anisotropic optical property. As a direct result of the linear dichroism, we successfully fabricate TlSe devices for polarization-sensitive photodetection. The discovery of layered TlSe with a strong in-plane anisotropy not only facilitates its applications in linear dichroic photodetection, but opens up more possibilities for other functional device applications.
| Original language | English (US) |
|---|---|
| Journal | ACS Nano |
| DOIs | |
| State | Accepted/In press - Jan 1 2018 |
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ASJC Scopus subject areas
- Materials Science(all)
- Engineering(all)
- Physics and Astronomy(all)
Cite this
In-Plane Optical Anisotropy and Linear Dichroism in Low-Symmetry Layered TlSe. / Yang, Shengxue; Hu, Chunguang; Wu, Minghui; Shen, Wanfu; Tongay, Sefaattin; Wu, Kedi; Wei, Bin; Sun, Zhaoyang; Jiang, Chengbao; Huang, Li; Wang, Zhongchang.
In: ACS Nano, 01.01.2018.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - In-Plane Optical Anisotropy and Linear Dichroism in Low-Symmetry Layered TlSe
AU - Yang, Shengxue
AU - Hu, Chunguang
AU - Wu, Minghui
AU - Shen, Wanfu
AU - Tongay, Sefaattin
AU - Wu, Kedi
AU - Wei, Bin
AU - Sun, Zhaoyang
AU - Jiang, Chengbao
AU - Huang, Li
AU - Wang, Zhongchang
PY - 2018/1/1
Y1 - 2018/1/1
N2 - In-plane anisotropy of layered materials adds another dimension to their applications, opening up avenues in diverse angle-resolved devices. However, to fulfill a strong inherent in-plane anisotropy in layered materials still poses a significant challenge as it often requires a low-symmetry nature of layered materials. Here, we report the fabrication of a member of layered semiconducting AIIIBVI compounds TlSe which possesses a low-symmetry tetragonal structure, and investigate its anisotropic light-matter interactions. We first identify the in-plane Raman-intensity anisotropy of thin-layer TlSe, offering unambiguous evidence that the anisotropy is sensitive to crystalline orientation. Further in-situ azimuth-dependent reflectance difference microscopy enables to directly evaluate in-plane optical anisotropy of layered TlSe and we demonstrate that the TlSe shows a linear dichroism under polarized absorption spectra arising from in-plane anisotropic optical property. As a direct result of the linear dichroism, we successfully fabricate TlSe devices for polarization-sensitive photodetection. The discovery of layered TlSe with a strong in-plane anisotropy not only facilitates its applications in linear dichroic photodetection, but opens up more possibilities for other functional device applications.
AB - In-plane anisotropy of layered materials adds another dimension to their applications, opening up avenues in diverse angle-resolved devices. However, to fulfill a strong inherent in-plane anisotropy in layered materials still poses a significant challenge as it often requires a low-symmetry nature of layered materials. Here, we report the fabrication of a member of layered semiconducting AIIIBVI compounds TlSe which possesses a low-symmetry tetragonal structure, and investigate its anisotropic light-matter interactions. We first identify the in-plane Raman-intensity anisotropy of thin-layer TlSe, offering unambiguous evidence that the anisotropy is sensitive to crystalline orientation. Further in-situ azimuth-dependent reflectance difference microscopy enables to directly evaluate in-plane optical anisotropy of layered TlSe and we demonstrate that the TlSe shows a linear dichroism under polarized absorption spectra arising from in-plane anisotropic optical property. As a direct result of the linear dichroism, we successfully fabricate TlSe devices for polarization-sensitive photodetection. The discovery of layered TlSe with a strong in-plane anisotropy not only facilitates its applications in linear dichroic photodetection, but opens up more possibilities for other functional device applications.
UR - http://www.scopus.com/inward/record.url?scp=85052313404&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85052313404&partnerID=8YFLogxK
U2 - 10.1021/acsnano.8b05162
DO - 10.1021/acsnano.8b05162
M3 - Article
C2 - 30071157
AN - SCOPUS:85052313404
JO - ACS Nano
JF - ACS Nano
SN - 1936-0851
ER -