Improving Analog Switching in HfOx-Based Resistive Memory with a Thermal Enhanced Layer

Wei Wu; Huaqiang Wu; Bin Gao; Ning Deng; Shimeng Yu; He Qian

doi:10.1109/LED.2017.2719161

Improving Analog Switching in HfO_x-Based Resistive Memory with a Thermal Enhanced Layer

Wei Wu, Huaqiang Wu, Bin Gao, Ning Deng, Shimeng Yu, He Qian

Research output: Contribution to journal › Article › peer-review

201 Scopus citations

Abstract

Analog RRAM with hundreds of resistance levels is an attractive device for neuromorphic computing. However, it is still very challenging to realize good analog behavior in filamentary RRAM cells. In this letter, we developed a novel methodology to improve the analog switching in filamentary RRAM. The impact of local temperature on analog switching behavior is elucidated. The transition from abrupt switching to analog switching is found at higher temperature. Based on this result, a thermal enhanced layer (TEL) is proposed to confine heat in switching layer for realizing analog RRAM. The HfO_x/TEL RRAM shows analog switching characteristics with more than ten times window using 50-ns pulses. Finally, a 1-kb analog RRAM array is demonstrated with uniform analog switching, fast speed, excellent resistance window, and excellent retention properties.

Original language	English (US)
Article number	7956170
Pages (from-to)	1019-1022
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	8
DOIs	https://doi.org/10.1109/LED.2017.2719161
State	Published - Aug 2017

Keywords

Analog RRAM
neuromorphic computing
synapse

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2017.2719161

Cite this

@article{df9a9a175d0a498b9ddfb7490bd0e177,

title = "Improving Analog Switching in HfOx-Based Resistive Memory with a Thermal Enhanced Layer",

abstract = "Analog RRAM with hundreds of resistance levels is an attractive device for neuromorphic computing. However, it is still very challenging to realize good analog behavior in filamentary RRAM cells. In this letter, we developed a novel methodology to improve the analog switching in filamentary RRAM. The impact of local temperature on analog switching behavior is elucidated. The transition from abrupt switching to analog switching is found at higher temperature. Based on this result, a thermal enhanced layer (TEL) is proposed to confine heat in switching layer for realizing analog RRAM. The HfOx/TEL RRAM shows analog switching characteristics with more than ten times window using 50-ns pulses. Finally, a 1-kb analog RRAM array is demonstrated with uniform analog switching, fast speed, excellent resistance window, and excellent retention properties.",

keywords = "Analog RRAM, neuromorphic computing, synapse",

author = "Wei Wu and Huaqiang Wu and Bin Gao and Ning Deng and Shimeng Yu and He Qian",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

month = aug,

doi = "10.1109/LED.2017.2719161",

language = "English (US)",

volume = "38",

pages = "1019--1022",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Improving Analog Switching in HfOx-Based Resistive Memory with a Thermal Enhanced Layer

AU - Wu, Wei

AU - Wu, Huaqiang

AU - Gao, Bin

AU - Deng, Ning

AU - Yu, Shimeng

AU - Qian, He

PY - 2017/8

Y1 - 2017/8

N2 - Analog RRAM with hundreds of resistance levels is an attractive device for neuromorphic computing. However, it is still very challenging to realize good analog behavior in filamentary RRAM cells. In this letter, we developed a novel methodology to improve the analog switching in filamentary RRAM. The impact of local temperature on analog switching behavior is elucidated. The transition from abrupt switching to analog switching is found at higher temperature. Based on this result, a thermal enhanced layer (TEL) is proposed to confine heat in switching layer for realizing analog RRAM. The HfOx/TEL RRAM shows analog switching characteristics with more than ten times window using 50-ns pulses. Finally, a 1-kb analog RRAM array is demonstrated with uniform analog switching, fast speed, excellent resistance window, and excellent retention properties.

AB - Analog RRAM with hundreds of resistance levels is an attractive device for neuromorphic computing. However, it is still very challenging to realize good analog behavior in filamentary RRAM cells. In this letter, we developed a novel methodology to improve the analog switching in filamentary RRAM. The impact of local temperature on analog switching behavior is elucidated. The transition from abrupt switching to analog switching is found at higher temperature. Based on this result, a thermal enhanced layer (TEL) is proposed to confine heat in switching layer for realizing analog RRAM. The HfOx/TEL RRAM shows analog switching characteristics with more than ten times window using 50-ns pulses. Finally, a 1-kb analog RRAM array is demonstrated with uniform analog switching, fast speed, excellent resistance window, and excellent retention properties.

KW - Analog RRAM

KW - neuromorphic computing

KW - synapse

UR - http://www.scopus.com/inward/record.url?scp=85021807264&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85021807264&partnerID=8YFLogxK

U2 - 10.1109/LED.2017.2719161

DO - 10.1109/LED.2017.2719161

M3 - Article

AN - SCOPUS:85021807264

SN - 0741-3106

VL - 38

SP - 1019

EP - 1022

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

M1 - 7956170

ER -