Improving Analog Switching in HfOx Based Resistive Memory with Thermal Enhanced Layer

Wei Wu, Huaqiang Wu, Bin Gao, Ning Deng, Shimeng Yu, He Qian

Research output: Contribution to journalArticle

69 Scopus citations


Analog RRAM with hundreds of resistance levels is an attractive device for neuromorphic computing. However, it is still very challenging to realize good analog behavior in filamentary RRAM cells. In this work, we developed a novel methodology to improve the analog switching in filamentary RRAM. The impact of local temperature on analog switching behavior is elucidated. The transition from abrupt switching to analog switching is found at higher temperature. Based on this result, a thermal enhanced layer (TEL) is proposed to confine heat in switching layer for realizing analog RRAM. The HfOx/TEL RRAM shows analog switching characteristics with more than 10 times window using 50ns pulses. Finally, a 1kb analog RRAM array is demonstrated with uniform analog switching, fast speed, excellent resistance window, and excellent retention properties.

Original languageEnglish (US)
JournalIEEE Electron Device Letters
StateAccepted/In press - Jun 23 2017


  • analog RRAM
  • Conductivity
  • Current measurement
  • Hafnium compounds
  • neuromorphic computing
  • Neuromorphics
  • Pulse measurements
  • Switches
  • synapse
  • Thermal conductivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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