Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

Hee Jin Kim, Suk Choi, Seong Soo Kim, Jae Hyun Ryou, P. Douglas Yoder, Russell D. Dupuis, Alec M. Fischer, Kewei Sun, Fernando Ponce

Research output: Contribution to journalArticle

75 Citations (Scopus)

Abstract

Improvement of the internal quantum efficiency in green-light emitting diodes has been achieved using lattice-matched InAlN electron-blocking layers. Higher electroluminescence intensities have been obtained due to better electron confinement in the device active region. The device efficiency has also been found to significantly depend on the InAlN growth temperature. Optimized InAlN growth at ∼840 °C results in a lower growth rate and longer growth times than at ∼780 °C. The observed reduction in emission efficiency for InAlN layers grown at higher temperatures is possibly attributed to thermal damage in the green active region.

Original languageEnglish (US)
Article number101102
JournalApplied Physics Letters
Volume96
Issue number10
DOIs
StatePublished - 2010

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quantum efficiency
light emitting diodes
electrons
electroluminescence
damage
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes. / Kim, Hee Jin; Choi, Suk; Kim, Seong Soo; Ryou, Jae Hyun; Yoder, P. Douglas; Dupuis, Russell D.; Fischer, Alec M.; Sun, Kewei; Ponce, Fernando.

In: Applied Physics Letters, Vol. 96, No. 10, 101102, 2010.

Research output: Contribution to journalArticle

Kim, Hee Jin ; Choi, Suk ; Kim, Seong Soo ; Ryou, Jae Hyun ; Yoder, P. Douglas ; Dupuis, Russell D. ; Fischer, Alec M. ; Sun, Kewei ; Ponce, Fernando. / Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes. In: Applied Physics Letters. 2010 ; Vol. 96, No. 10.
@article{fae085e83fc44b46963edf4acb0edd5b,
title = "Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes",
abstract = "Improvement of the internal quantum efficiency in green-light emitting diodes has been achieved using lattice-matched InAlN electron-blocking layers. Higher electroluminescence intensities have been obtained due to better electron confinement in the device active region. The device efficiency has also been found to significantly depend on the InAlN growth temperature. Optimized InAlN growth at ∼840 °C results in a lower growth rate and longer growth times than at ∼780 °C. The observed reduction in emission efficiency for InAlN layers grown at higher temperatures is possibly attributed to thermal damage in the green active region.",
author = "Kim, {Hee Jin} and Suk Choi and Kim, {Seong Soo} and Ryou, {Jae Hyun} and Yoder, {P. Douglas} and Dupuis, {Russell D.} and Fischer, {Alec M.} and Kewei Sun and Fernando Ponce",
year = "2010",
doi = "10.1063/1.3353995",
language = "English (US)",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

AU - Kim, Hee Jin

AU - Choi, Suk

AU - Kim, Seong Soo

AU - Ryou, Jae Hyun

AU - Yoder, P. Douglas

AU - Dupuis, Russell D.

AU - Fischer, Alec M.

AU - Sun, Kewei

AU - Ponce, Fernando

PY - 2010

Y1 - 2010

N2 - Improvement of the internal quantum efficiency in green-light emitting diodes has been achieved using lattice-matched InAlN electron-blocking layers. Higher electroluminescence intensities have been obtained due to better electron confinement in the device active region. The device efficiency has also been found to significantly depend on the InAlN growth temperature. Optimized InAlN growth at ∼840 °C results in a lower growth rate and longer growth times than at ∼780 °C. The observed reduction in emission efficiency for InAlN layers grown at higher temperatures is possibly attributed to thermal damage in the green active region.

AB - Improvement of the internal quantum efficiency in green-light emitting diodes has been achieved using lattice-matched InAlN electron-blocking layers. Higher electroluminescence intensities have been obtained due to better electron confinement in the device active region. The device efficiency has also been found to significantly depend on the InAlN growth temperature. Optimized InAlN growth at ∼840 °C results in a lower growth rate and longer growth times than at ∼780 °C. The observed reduction in emission efficiency for InAlN layers grown at higher temperatures is possibly attributed to thermal damage in the green active region.

UR - http://www.scopus.com/inward/record.url?scp=77949673098&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949673098&partnerID=8YFLogxK

U2 - 10.1063/1.3353995

DO - 10.1063/1.3353995

M3 - Article

AN - SCOPUS:77949673098

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 101102

ER -