Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

Hee Jin Kim, Suk Choi, Seong Soo Kim, Jae Hyun Ryou, P. Douglas Yoder, Russell D. Dupuis, Alec M. Fischer, Kewei Sun, Fernando Ponce

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Abstract

Improvement of the internal quantum efficiency in green-light emitting diodes has been achieved using lattice-matched InAlN electron-blocking layers. Higher electroluminescence intensities have been obtained due to better electron confinement in the device active region. The device efficiency has also been found to significantly depend on the InAlN growth temperature. Optimized InAlN growth at ∼840 °C results in a lower growth rate and longer growth times than at ∼780 °C. The observed reduction in emission efficiency for InAlN layers grown at higher temperatures is possibly attributed to thermal damage in the green active region.

Original languageEnglish (US)
Article number101102
JournalApplied Physics Letters
Volume96
Issue number10
DOIs
StatePublished - Mar 26 2010

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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