Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

Hee Jin Kim; Suk Choi; Seong Soo Kim; Jae Hyun Ryou; P. Douglas Yoder; Russell D. Dupuis; Alec M. Fischer; Kewei Sun; Fernando Ponce

doi:10.1063/1.3353995

Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

Hee Jin Kim, Suk Choi, Seong Soo Kim, Jae Hyun Ryou, P. Douglas Yoder, Russell D. Dupuis, Alec M. Fischer, Kewei Sun, Fernando Ponce

Physics

Research output: Contribution to journal › Article › peer-review

91 Scopus citations

Abstract

Improvement of the internal quantum efficiency in green-light emitting diodes has been achieved using lattice-matched InAlN electron-blocking layers. Higher electroluminescence intensities have been obtained due to better electron confinement in the device active region. The device efficiency has also been found to significantly depend on the InAlN growth temperature. Optimized InAlN growth at ∼840 °C results in a lower growth rate and longer growth times than at ∼780 °C. The observed reduction in emission efficiency for InAlN layers grown at higher temperatures is possibly attributed to thermal damage in the green active region.

Original language	English (US)
Article number	101102
Journal	Applied Physics Letters
Volume	96
Issue number	10
DOIs	https://doi.org/10.1063/1.3353995
State	Published - 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3353995

Cite this

@article{fae085e83fc44b46963edf4acb0edd5b,

title = "Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes",

abstract = "Improvement of the internal quantum efficiency in green-light emitting diodes has been achieved using lattice-matched InAlN electron-blocking layers. Higher electroluminescence intensities have been obtained due to better electron confinement in the device active region. The device efficiency has also been found to significantly depend on the InAlN growth temperature. Optimized InAlN growth at ∼840 °C results in a lower growth rate and longer growth times than at ∼780 °C. The observed reduction in emission efficiency for InAlN layers grown at higher temperatures is possibly attributed to thermal damage in the green active region.",

author = "Kim, {Hee Jin} and Suk Choi and Kim, {Seong Soo} and Ryou, {Jae Hyun} and Yoder, {P. Douglas} and Dupuis, {Russell D.} and Fischer, {Alec M.} and Kewei Sun and Fernando Ponce",

note = "Funding Information: This work was supported by the Department of Energy under Contract No. DE-FC26-08NT01580. Authors also thank SAFC Hitech Inc. for their support. The work at ASU was partially supported by a gift from Nichia Corporation. R.D.D. acknowledges additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.",

year = "2010",

doi = "10.1063/1.3353995",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

AU - Kim, Hee Jin

AU - Choi, Suk

AU - Kim, Seong Soo

AU - Ryou, Jae Hyun

AU - Yoder, P. Douglas

AU - Dupuis, Russell D.

AU - Fischer, Alec M.

AU - Sun, Kewei

AU - Ponce, Fernando

N1 - Funding Information: This work was supported by the Department of Energy under Contract No. DE-FC26-08NT01580. Authors also thank SAFC Hitech Inc. for their support. The work at ASU was partially supported by a gift from Nichia Corporation. R.D.D. acknowledges additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance.

PY - 2010

Y1 - 2010

N2 - Improvement of the internal quantum efficiency in green-light emitting diodes has been achieved using lattice-matched InAlN electron-blocking layers. Higher electroluminescence intensities have been obtained due to better electron confinement in the device active region. The device efficiency has also been found to significantly depend on the InAlN growth temperature. Optimized InAlN growth at ∼840 °C results in a lower growth rate and longer growth times than at ∼780 °C. The observed reduction in emission efficiency for InAlN layers grown at higher temperatures is possibly attributed to thermal damage in the green active region.

AB - Improvement of the internal quantum efficiency in green-light emitting diodes has been achieved using lattice-matched InAlN electron-blocking layers. Higher electroluminescence intensities have been obtained due to better electron confinement in the device active region. The device efficiency has also been found to significantly depend on the InAlN growth temperature. Optimized InAlN growth at ∼840 °C results in a lower growth rate and longer growth times than at ∼780 °C. The observed reduction in emission efficiency for InAlN layers grown at higher temperatures is possibly attributed to thermal damage in the green active region.

UR - http://www.scopus.com/inward/record.url?scp=77949673098&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949673098&partnerID=8YFLogxK

U2 - 10.1063/1.3353995

DO - 10.1063/1.3353995

M3 - Article

AN - SCOPUS:77949673098

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 101102

ER -

Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this