10 Citations (Scopus)

Abstract

The GaP crystal quality and Si bulk lifetime of GaP/Si heterostructures, grown by molecular beam epitaxy, are investigated. The Si bulk lifetime is reduced by over one order of magnitude after thermal deoxidation at high temperatures (>700 °C). This significant reduction of the bulk lifetime is not observed when 150 nm-thick SiNx film is present on the backside of Si wafer, which can act as a diffusion barrier and/or getter. In addition, a 15 nm-thick GaP layer grown on the front side of Si wafer with SiNx on the backside shows a high crystal quality of GaP with a low crystalline defect density of 1.1 × 105 cm−2. Moreover, the Si bulk lifetime is determined to be 1.83 ms with a-Si:H passivation at an injected minority-carrier density of 1 × 1015 cm−3, indicative of no bulk lifetime degradation. The high crystallinity of GaP and improved Si bulk lifetime are beneficial to improve photovoltaic device performance of III–V compound solar cells integrated with Si solar cells.

Original languageEnglish (US)
Pages (from-to)83-87
Number of pages5
JournalJournal of Crystal Growth
Volume475
DOIs
StatePublished - Oct 1 2017

Fingerprint

Silicon
Epitaxial growth
Solar cells
life (durability)
Crystals
Diffusion barriers
Defect density
silicon
Thick films
Passivation
Molecular beam epitaxy
crystals
Carrier concentration
Heterojunctions
Crystalline materials
Degradation
solar cells
wafers
minority carriers
Temperature

Keywords

  • A1. High resolution X-ray diffraction
  • A3. Molecular beam epitaxy
  • B2. Semiconducting III-V materials
  • B3. Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy. / Zhang, Chaomin; Kim, Yeongho; Faleev, Nikolai N.; Honsberg, Christiana.

In: Journal of Crystal Growth, Vol. 475, 01.10.2017, p. 83-87.

Research output: Contribution to journalArticle

Zhang, Chaomin ; Kim, Yeongho ; Faleev, Nikolai N. ; Honsberg, Christiana. / Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy. In: Journal of Crystal Growth. 2017 ; Vol. 475. pp. 83-87.
@article{a90ac5bafa4849a69cc25219411bc162,
title = "Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy",
abstract = "The GaP crystal quality and Si bulk lifetime of GaP/Si heterostructures, grown by molecular beam epitaxy, are investigated. The Si bulk lifetime is reduced by over one order of magnitude after thermal deoxidation at high temperatures (>700 °C). This significant reduction of the bulk lifetime is not observed when 150 nm-thick SiNx film is present on the backside of Si wafer, which can act as a diffusion barrier and/or getter. In addition, a 15 nm-thick GaP layer grown on the front side of Si wafer with SiNx on the backside shows a high crystal quality of GaP with a low crystalline defect density of 1.1 × 105 cm−2. Moreover, the Si bulk lifetime is determined to be 1.83 ms with a-Si:H passivation at an injected minority-carrier density of 1 × 1015 cm−3, indicative of no bulk lifetime degradation. The high crystallinity of GaP and improved Si bulk lifetime are beneficial to improve photovoltaic device performance of III–V compound solar cells integrated with Si solar cells.",
keywords = "A1. High resolution X-ray diffraction, A3. Molecular beam epitaxy, B2. Semiconducting III-V materials, B3. Solar cells",
author = "Chaomin Zhang and Yeongho Kim and Faleev, {Nikolai N.} and Christiana Honsberg",
year = "2017",
month = "10",
day = "1",
doi = "10.1016/j.jcrysgro.2017.05.030",
language = "English (US)",
volume = "475",
pages = "83--87",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Improvement of GaP crystal quality and silicon bulk lifetime in GaP/Si heteroepitaxy

AU - Zhang, Chaomin

AU - Kim, Yeongho

AU - Faleev, Nikolai N.

AU - Honsberg, Christiana

PY - 2017/10/1

Y1 - 2017/10/1

N2 - The GaP crystal quality and Si bulk lifetime of GaP/Si heterostructures, grown by molecular beam epitaxy, are investigated. The Si bulk lifetime is reduced by over one order of magnitude after thermal deoxidation at high temperatures (>700 °C). This significant reduction of the bulk lifetime is not observed when 150 nm-thick SiNx film is present on the backside of Si wafer, which can act as a diffusion barrier and/or getter. In addition, a 15 nm-thick GaP layer grown on the front side of Si wafer with SiNx on the backside shows a high crystal quality of GaP with a low crystalline defect density of 1.1 × 105 cm−2. Moreover, the Si bulk lifetime is determined to be 1.83 ms with a-Si:H passivation at an injected minority-carrier density of 1 × 1015 cm−3, indicative of no bulk lifetime degradation. The high crystallinity of GaP and improved Si bulk lifetime are beneficial to improve photovoltaic device performance of III–V compound solar cells integrated with Si solar cells.

AB - The GaP crystal quality and Si bulk lifetime of GaP/Si heterostructures, grown by molecular beam epitaxy, are investigated. The Si bulk lifetime is reduced by over one order of magnitude after thermal deoxidation at high temperatures (>700 °C). This significant reduction of the bulk lifetime is not observed when 150 nm-thick SiNx film is present on the backside of Si wafer, which can act as a diffusion barrier and/or getter. In addition, a 15 nm-thick GaP layer grown on the front side of Si wafer with SiNx on the backside shows a high crystal quality of GaP with a low crystalline defect density of 1.1 × 105 cm−2. Moreover, the Si bulk lifetime is determined to be 1.83 ms with a-Si:H passivation at an injected minority-carrier density of 1 × 1015 cm−3, indicative of no bulk lifetime degradation. The high crystallinity of GaP and improved Si bulk lifetime are beneficial to improve photovoltaic device performance of III–V compound solar cells integrated with Si solar cells.

KW - A1. High resolution X-ray diffraction

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting III-V materials

KW - B3. Solar cells

UR - http://www.scopus.com/inward/record.url?scp=85020435327&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85020435327&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2017.05.030

DO - 10.1016/j.jcrysgro.2017.05.030

M3 - Article

AN - SCOPUS:85020435327

VL - 475

SP - 83

EP - 87

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -