Improvement in electrical stress stability of indium zinc oxide TFTs after low temperature postanneals

Engineering & Materials Science

• Zinc oxide 100%
• Indium 97%
• Thin film transistors 96%
• Oxide films 93%
• Temperature 30%
• Energy gap 17%
• Annealing 14%
• Curing 14%
• Semiconductor materials 13%
• Defects 10%
• Electric potential 7%

Physics & Astronomy

• indium oxides 74%
• zinc oxides 72%
• transistors 60%
• thin films 38%
• performance 33%
• temperature 22%
• traps 18%
• insulators 18%
• annealing 15%
• defects 13%
• electric potential 13%

Chemical Compounds

• Zinc Oxide 73%
• Nonconductor 28%
• Curing 23%
• Annealing 19%
• Semiconductor 19%
• Band Gap 18%
• Voltage 18%
• Reduction 11%
• Time 9%