Abstract

We report the effect of low temperature long anneals on the performance and elevated temperature stability of low temperature fabricated indium zinc oxide (IZO) thin film transistors (TFTs). There is an optimum annealing time of 48 h for the best performance and elevated temperature stability. The 48 h annealed TFTs showed stable turn-on voltage and subthreshold swing with operation temperatures when compared to the as-fabricated TFTs. The performance/stability improvements are attributed to the reduction in trap-state density at the semiconductor/insulator interface and to the curing of the defect states in the bandgap of IZO.

Original languageEnglish (US)
Pages (from-to)H464-H466
JournalElectrochemical and Solid-State Letters
Volume13
Issue number12
DOIs
StatePublished - Nov 1 2010

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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