Improvement in electrical stress stability of indium zinc oxide TFTs after low temperature postanneals

A. Indluru; Terry Alford

doi:10.1149/1.3487930

Improvement in electrical stress stability of indium zinc oxide TFTs after low temperature postanneals

A. Indluru, Terry Alford

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We report the effect of low temperature long anneals on the performance and elevated temperature stability of low temperature fabricated indium zinc oxide (IZO) thin film transistors (TFTs). There is an optimum annealing time of 48 h for the best performance and elevated temperature stability. The 48 h annealed TFTs showed stable turn-on voltage and subthreshold swing with operation temperatures when compared to the as-fabricated TFTs. The performance/stability improvements are attributed to the reduction in trap-state density at the semiconductor/insulator interface and to the curing of the defect states in the bandgap of IZO.

Original language	English (US)
Pages (from-to)	H464-H466
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	12
DOIs	https://doi.org/10.1149/1.3487930
State	Published - 2010

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "We report the effect of low temperature long anneals on the performance and elevated temperature stability of low temperature fabricated indium zinc oxide (IZO) thin film transistors (TFTs). There is an optimum annealing time of 48 h for the best performance and elevated temperature stability. The 48 h annealed TFTs showed stable turn-on voltage and subthreshold swing with operation temperatures when compared to the as-fabricated TFTs. The performance/stability improvements are attributed to the reduction in trap-state density at the semiconductor/insulator interface and to the curing of the defect states in the bandgap of IZO.",

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AU - Alford, Terry

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AB - We report the effect of low temperature long anneals on the performance and elevated temperature stability of low temperature fabricated indium zinc oxide (IZO) thin film transistors (TFTs). There is an optimum annealing time of 48 h for the best performance and elevated temperature stability. The 48 h annealed TFTs showed stable turn-on voltage and subthreshold swing with operation temperatures when compared to the as-fabricated TFTs. The performance/stability improvements are attributed to the reduction in trap-state density at the semiconductor/insulator interface and to the curing of the defect states in the bandgap of IZO.

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Improvement in electrical stress stability of indium zinc oxide TFTs after low temperature postanneals

Abstract

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