Improved uniformity of resistive switching behaviors in Hf O2 thin films with embedded Al layers

Shimeng Yu, Bin Gao, Haibo Dai, Bing Sun, Lifeng Liu, Xiaoyan Liu, Ruqi Han, Jinfeng Kang, Bin Yu

Research output: Contribution to journalArticle

90 Citations (Scopus)

Abstract

A technical solution is presented to improve the uniformity of Hf O 2 -based resistive switching memory by embedding thin Al layers between Hf O2 and electrode layers. Compared with those pure Hf O2 devices, a remarkably improved uniformity of switching parameters such as forming voltages, set voltages, and resistances in high/low states was demonstrated in the Hf O2 devices with embedded Al layers. Al atoms are assumed to diffuse into Hf O2 thin films and are intended to localize oxygen vacancies due to reduced oxygen vacancy formation energy, thus stabilizing the generation of conductive filaments, which helps improve the resistive switching uniformity.

Original languageEnglish (US)
JournalElectrochemical and Solid-State Letters
Volume13
Issue number2
DOIs
StatePublished - 2010
Externally publishedYes

Fingerprint

Oxygen vacancies
Thin films
thin films
Electric potential
electric potential
oxygen
energy of formation
embedding
filaments
Data storage equipment
Atoms
Electrodes
electrodes
atoms

ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

Cite this

Improved uniformity of resistive switching behaviors in Hf O2 thin films with embedded Al layers. / Yu, Shimeng; Gao, Bin; Dai, Haibo; Sun, Bing; Liu, Lifeng; Liu, Xiaoyan; Han, Ruqi; Kang, Jinfeng; Yu, Bin.

In: Electrochemical and Solid-State Letters, Vol. 13, No. 2, 2010.

Research output: Contribution to journalArticle

Yu, Shimeng ; Gao, Bin ; Dai, Haibo ; Sun, Bing ; Liu, Lifeng ; Liu, Xiaoyan ; Han, Ruqi ; Kang, Jinfeng ; Yu, Bin. / Improved uniformity of resistive switching behaviors in Hf O2 thin films with embedded Al layers. In: Electrochemical and Solid-State Letters. 2010 ; Vol. 13, No. 2.
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