A technical solution is presented to improve the uniformity of Hf O 2 -based resistive switching memory by embedding thin Al layers between Hf O2 and electrode layers. Compared with those pure Hf O2 devices, a remarkably improved uniformity of switching parameters such as forming voltages, set voltages, and resistances in high/low states was demonstrated in the Hf O2 devices with embedded Al layers. Al atoms are assumed to diffuse into Hf O2 thin films and are intended to localize oxygen vacancies due to reduced oxygen vacancy formation energy, thus stabilizing the generation of conductive filaments, which helps improve the resistive switching uniformity.
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering