Improved transfer of graphene for gated schottky-junction, vertical, organic, field-effect transistors

Maxime G. Lemaitre, Evan P. Donoghue, Mitchell A. McCarthy, Bo Liu, Sefaattin Tongay, Brent Gila, Purushottam Kumar, Rajiv K. Singh, Bill R. Appleton, Andrew G. Rinzler

Research output: Contribution to journalArticle

71 Scopus citations

Abstract

An improved process for graphene transfer was used to demonstrate high performance graphene enabled vertical organic field effect transistors (G-VFETs). The process reduces disorder and eliminates the polymeric residue that typically plagues transferred films. The method also allows for purposely creating pores in the graphene of a controlled areal density. Transconductance observed in G-VFETs fabricated with a continuous (pore-free) graphene source electrode is attributed to modulation of the contact barrier height between the graphene and organic semiconductor due to a gate field induced Fermi level shift in the low density of electronic-states graphene electrode. Pores introduced in the graphene source electrode are shown to boost the G-VFET performance, which scales with the areal pore density taking advantage of both barrier height lowering and tunnel barrier thinning. Devices with areal pore densities of 20% exhibit on/off ratios and output current densities exceeding 10 6 and 200 mA/cm 2, respectively, at drain voltages below 5 V.

Original languageEnglish (US)
Pages (from-to)9095-9102
Number of pages8
JournalACS nano
Volume6
Issue number10
DOIs
StatePublished - Oct 23 2012
Externally publishedYes

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Keywords

  • grapheme
  • organic transistors
  • transparent electrode
  • vertical field effect transistor

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Lemaitre, M. G., Donoghue, E. P., McCarthy, M. A., Liu, B., Tongay, S., Gila, B., Kumar, P., Singh, R. K., Appleton, B. R., & Rinzler, A. G. (2012). Improved transfer of graphene for gated schottky-junction, vertical, organic, field-effect transistors. ACS nano, 6(10), 9095-9102. https://doi.org/10.1021/nn303848k