Abstract

We report the effect of low temperature long anneals on the performance and elevated temperature stability of low temperature fabricated indium zinc oxide (IZO) thin film transistors (TFTs). We have found that there is an optimum annealing time of 48 hours for the best performance and elevated temperature stability. The 48 hour annealed TFTs showed a stable turn-on voltage, and sub-threshold swing with operation temperatures when compared to the as-fabricated TFTs. The performance/stability improvements are attributed to the reduction in trap-state-density at the semiconductor/insulator interface, and curing of the defects states in the band-gap of IZO.

Original languageEnglish (US)
Title of host publicationThin Film Transistors 10, TFT 10
Pages337-344
Number of pages8
Edition5
DOIs
StatePublished - Dec 1 2010
Event10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 11 2010Oct 15 2010

Publication series

NameECS Transactions
Number5
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/11/1010/15/10

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Indluru, A., & Alford, T. (2010). Improved thermal stability of indium zinc oxide TFTs by low temperature post annealing. In Thin Film Transistors 10, TFT 10 (5 ed., pp. 337-344). (ECS Transactions; Vol. 33, No. 5). https://doi.org/10.1149/1.3481256