@inproceedings{7d53b2ae1ab74feda17bca274a9c30b5,
title = "Improved performance of GaAsSb/GaAs SQW lasers",
abstract = "This paper reports the improvements and limitations of MBE grown 1.3μm GaAsSb/GaAs single QW lasers. At room temperature, the devices show a low threshold current density (Jth) of 253 Acm-2, a transparent current density of 98 Acm-2, an internal quantum efficiency of 71%, an optical loss of 18 cm-1 and a characteristic temperature (T0) = 51K. The defect related recombination in these devices is negligible and the primary non-radiative current path has a stronger dependence on the carrier density than the radiative current contributing to ∼84% of the threshold current at RT. From high hydrostatic pressure dependent measurements, a slight decrease followed by the strong increase in threshold current with pressure is observed, suggesting that the device performance is limited to both Auger recombination and carrier leakage.",
keywords = "Carrier recombination, GaAsSb/GaAs, Quantum well laser",
author = "N. Hossain and Jin, {S. R.} and Sweeney, {S. J.} and Yu, {S. Q.} and Shane Johnson and D. Ding and Yong-Hang Zhang",
year = "2010",
doi = "10.1117/12.842253",
language = "English (US)",
isbn = "9780819480125",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Novel In-Plane Semiconductor Lasers IX",
note = "Novel In-Plane Semiconductor Lasers IX ; Conference date: 25-01-2010 Through 28-01-2010",
}