Abstract

This paper reports the improvements and limitations of MBE grown 1.3μm GaAsSb/GaAs single QW lasers. At room temperature, the devices show a low threshold current density (Jth) of 253 Acm-2, a transparent current density of 98 Acm-2, an internal quantum efficiency of 71%, an optical loss of 18 cm-1 and a characteristic temperature (T0) = 51K. The defect related recombination in these devices is negligible and the primary non-radiative current path has a stronger dependence on the carrier density than the radiative current contributing to ∼84% of the threshold current at RT. From high hydrostatic pressure dependent measurements, a slight decrease followed by the strong increase in threshold current with pressure is observed, suggesting that the device performance is limited to both Auger recombination and carrier leakage.

Original languageEnglish (US)
Title of host publicationNovel In-Plane Semiconductor Lasers IX
DOIs
StatePublished - May 3 2010
EventNovel In-Plane Semiconductor Lasers IX - San Francisco, CA, United States
Duration: Jan 25 2010Jan 28 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7616
ISSN (Print)0277-786X

Other

OtherNovel In-Plane Semiconductor Lasers IX
CountryUnited States
CitySan Francisco, CA
Period1/25/101/28/10

Keywords

  • Carrier recombination
  • GaAsSb/GaAs
  • Quantum well laser

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Hossain, N., Jin, S. R., Sweeney, S. J., Yu, S. Q., Johnson, S., Ding, D., & Zhang, Y-H. (2010). Improved performance of GaAsSb/GaAs SQW lasers. In Novel In-Plane Semiconductor Lasers IX [761608] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7616). https://doi.org/10.1117/12.842253