Abstract

This paper reports the improvements and limitations of MBE grown 1.3μm GaAsSb/GaAs single QW lasers. At room temperature, the devices show a low threshold current density (Jth) of 253 Acm-2, a transparent current density of 98 Acm-2, an internal quantum efficiency of 71%, an optical loss of 18 cm-1 and a characteristic temperature (T0) = 51K. The defect related recombination in these devices is negligible and the primary non-radiative current path has a stronger dependence on the carrier density than the radiative current contributing to ∼84% of the threshold current at RT. From high hydrostatic pressure dependent measurements, a slight decrease followed by the strong increase in threshold current with pressure is observed, suggesting that the device performance is limited to both Auger recombination and carrier leakage.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume7616
DOIs
StatePublished - 2010
EventNovel In-Plane Semiconductor Lasers IX - San Francisco, CA, United States
Duration: Jan 25 2010Jan 28 2010

Other

OtherNovel In-Plane Semiconductor Lasers IX
CountryUnited States
CitySan Francisco, CA
Period1/25/101/28/10

Fingerprint

Gallium Arsenide
threshold currents
Laser
Recombination
Threshold current density
Optical losses
Lasers
Hydrostatic pressure
Quantum efficiency
Molecular beam epitaxy
current density
lasers
Carrier concentration
Hydrostatic Pressure
Current density
Quantum Efficiency
Leakage
hydrostatic pressure
Temperature
Defects

Keywords

  • Carrier recombination
  • GaAsSb/GaAs
  • Quantum well laser

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Hossain, N., Jin, S. R., Sweeney, S. J., Yu, S. Q., Johnson, S., Ding, D., & Zhang, Y-H. (2010). Improved performance of GaAsSb/GaAs SQW lasers. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 7616). [761608] https://doi.org/10.1117/12.842253

Improved performance of GaAsSb/GaAs SQW lasers. / Hossain, N.; Jin, S. R.; Sweeney, S. J.; Yu, S. Q.; Johnson, Shane; Ding, D.; Zhang, Yong-Hang.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7616 2010. 761608.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hossain, N, Jin, SR, Sweeney, SJ, Yu, SQ, Johnson, S, Ding, D & Zhang, Y-H 2010, Improved performance of GaAsSb/GaAs SQW lasers. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 7616, 761608, Novel In-Plane Semiconductor Lasers IX, San Francisco, CA, United States, 1/25/10. https://doi.org/10.1117/12.842253
Hossain N, Jin SR, Sweeney SJ, Yu SQ, Johnson S, Ding D et al. Improved performance of GaAsSb/GaAs SQW lasers. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7616. 2010. 761608 https://doi.org/10.1117/12.842253
Hossain, N. ; Jin, S. R. ; Sweeney, S. J. ; Yu, S. Q. ; Johnson, Shane ; Ding, D. ; Zhang, Yong-Hang. / Improved performance of GaAsSb/GaAs SQW lasers. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7616 2010.
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