Abstract
Current gain degradation in irradiated bipolar junction transistors is primarily due to excess base current caused by enhanced carrier recombination in the emitter-base space-charge region (SCR). Radiation-induced traps at the interface between silicon and the bipolar base oxide facilitate the recombination process primarily above the sensitive emitter-base junction. This leads to an increase in surface recombination current in the SCR, which is a non-ideal component of the BJT's base current characteristic under active bias conditions. In this paper, we derive a precise analytical model for surface recombination current that captures bias dependencies typically omitted from traditional models. This improved model is validated by comparisons to these traditional approaches.
Original language | English (US) |
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Article number | 7182367 |
Pages (from-to) | 1658-1664 |
Number of pages | 7 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 62 |
Issue number | 4 |
DOIs | |
State | Published - Aug 1 2015 |
Keywords
- Base current
- bipolar junction transistors
- emitter-base junction
- interface traps
- radiation effects
- recombination
- space-charge
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering