Abstract

Current gain degradation in irradiated bipolar junction transistors is primarily due to excess base current caused by enhanced carrier recombination in the emitter-base space-charge region (SCR). Radiation-induced traps at the interface between silicon and the bipolar base oxide facilitate the recombination process primarily above the sensitive emitter-base junction. This leads to an increase in surface recombination current in the SCR, which is a non-ideal component of the BJT's base current characteristic under active bias conditions. In this paper, we derive a precise analytical model for surface recombination current that captures bias dependencies typically omitted from traditional models. This improved model is validated by comparisons to these traditional approaches.

Original languageEnglish (US)
Article number7182367
Pages (from-to)1658-1664
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume62
Issue number4
DOIs
StatePublished - Aug 1 2015

Fingerprint

junction transistors
Bipolar transistors
bipolar transistors
Electric space charge
Analytical models
space charge
emitters
Radiation
Degradation
Silicon
Oxides
traps
degradation
oxides
silicon
radiation

Keywords

  • Base current
  • bipolar junction transistors
  • emitter-base junction
  • interface traps
  • radiation effects
  • recombination
  • space-charge

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Improved model for increased surface recombination current in irradiated bipolar junction transistors. / Barnaby, Hugh; Vermeire, B.; Campola, M. J.

In: IEEE Transactions on Nuclear Science, Vol. 62, No. 4, 7182367, 01.08.2015, p. 1658-1664.

Research output: Contribution to journalArticle

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