Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors

B. S. Tolleson; P. C. Adell; B. Rax; Hugh Barnaby; A. Privat; X. Han; A. Mahmud; I. Livingston

doi:10.1109/TNS.2018.2829110

Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors

B. S. Tolleson, P. C. Adell, B. Rax, Hugh Barnaby, A. Privat, X. Han, A. Mahmud, I. Livingston

Research output: Contribution to journal › Article

2 Scopus citations

Abstract

An improved total ionizing dose model for lateral PNP bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.

Original language	English (US)
Journal	IEEE Transactions on Nuclear Science
DOIs	https://doi.org/10.1109/TNS.2018.2829110
State	Accepted/In press - Apr 20 2018

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Keywords

base current
bipolar junction transistor
current gain
Doping
fixed positive oxide charge
Integrated circuit modeling
interface traps
Ionizing radiation
Junctions
lateral PNP transistor
Mathematical model
recombination-generation
Silicon
surface recombination velocity
total ionizing dose
Transistors

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Cite this

Tolleson, B. S., Adell, P. C., Rax, B., Barnaby, H., Privat, A., Han, X., Mahmud, A., & Livingston, I. (Accepted/In press). Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors. IEEE Transactions on Nuclear Science. https://doi.org/10.1109/TNS.2018.2829110

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abstract = "An improved total ionizing dose model for lateral PNP bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.",

keywords = "base current, bipolar junction transistor, current gain, Doping, fixed positive oxide charge, Integrated circuit modeling, interface traps, Ionizing radiation, Junctions, lateral PNP transistor, Mathematical model, recombination-generation, Silicon, surface recombination velocity, total ionizing dose, Transistors",

author = "Tolleson, {B. S.} and Adell, {P. C.} and B. Rax and Hugh Barnaby and A. Privat and X. Han and A. Mahmud and I. Livingston",

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doi = "10.1109/TNS.2018.2829110",

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AU - Tolleson, B. S.

AU - Adell, P. C.

AU - Rax, B.

AU - Barnaby, Hugh

AU - Privat, A.

AU - Han, X.

AU - Mahmud, A.

AU - Livingston, I.

PY - 2018/4/20

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AB - An improved total ionizing dose model for lateral PNP bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.

KW - base current

KW - bipolar junction transistor

KW - current gain

KW - Doping

KW - fixed positive oxide charge

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KW - interface traps

KW - Ionizing radiation

KW - Junctions

KW - lateral PNP transistor

KW - Mathematical model

KW - recombination-generation

KW - Silicon

KW - surface recombination velocity

KW - total ionizing dose

KW - Transistors

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Access to Document

10.1109/TNS.2018.2829110