Abstract

An improved total ionizing dose model for lateral PNP bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.

Original languageEnglish (US)
JournalIEEE Transactions on Nuclear Science
DOIs
StateAccepted/In press - Apr 20 2018

Fingerprint

junction transistors
Bipolar transistors
bipolar transistors
degradation
Radiation
Degradation
dosage
Defects
defects
radiation

Keywords

  • base current
  • bipolar junction transistor
  • current gain
  • Doping
  • fixed positive oxide charge
  • Integrated circuit modeling
  • interface traps
  • Ionizing radiation
  • Junctions
  • lateral PNP transistor
  • Mathematical model
  • recombination-generation
  • Silicon
  • surface recombination velocity
  • total ionizing dose
  • Transistors

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors. / Tolleson, B. S.; Adell, P. C.; Rax, B.; Barnaby, Hugh; Privat, A.; Han, X.; Mahmud, A.; Livingston, I.

In: IEEE Transactions on Nuclear Science, 20.04.2018.

Research output: Contribution to journalArticle

Tolleson, B. S. ; Adell, P. C. ; Rax, B. ; Barnaby, Hugh ; Privat, A. ; Han, X. ; Mahmud, A. ; Livingston, I. / Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors. In: IEEE Transactions on Nuclear Science. 2018.
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