Improved model for excess base current in irradiated lateral p-n-p bipolar junction transistors

B. S. Tolleson; P. C. Adell; B. Rax; Hugh Barnaby; A. Privat; X. Han; A. Mahmud; I. Livingston

doi:10.1109/TNS.2018.2829110

Improved model for excess base current in irradiated lateral p-n-p bipolar junction transistors

B. S. Tolleson, P. C. Adell, B. Rax, Hugh Barnaby, A. Privat, X. Han, A. Mahmud, I. Livingston

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

An improved total ionizing dose model for lateral p-n-p bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.

Original language	English (US)
Article number	8344495
Pages (from-to)	1488-1495
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	65
Issue number	8
DOIs	https://doi.org/10.1109/TNS.2018.2829110
State	Published - Aug 2018

Keywords

Base current
bipolar junction transistor (BJT)
current gain
fixed positive oxide charge
interface traps
lateral p-n-p transistor (LPNP)
recombination-generation
surface-recombination velocity
total ionizing dose (TID)

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2018.2829110

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title = "Improved model for excess base current in irradiated lateral p-n-p bipolar junction transistors",

abstract = "An improved total ionizing dose model for lateral p-n-p bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.",

keywords = "Base current, bipolar junction transistor (BJT), current gain, fixed positive oxide charge, interface traps, lateral p-n-p transistor (LPNP), recombination-generation, surface-recombination velocity, total ionizing dose (TID)",

author = "Tolleson, {B. S.} and Adell, {P. C.} and B. Rax and Hugh Barnaby and A. Privat and X. Han and A. Mahmud and I. Livingston",

note = "Funding Information: Manuscript received March 2, 2018; revised April 9, 2018; accepted April 10, 2018. Date of publication April 20, 2018; date of current version August 15, 2018. This work was supported by the NASA Jet Propulsion Laboratory under Grant 1562540. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

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doi = "10.1109/TNS.2018.2829110",

language = "English (US)",

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T1 - Improved model for excess base current in irradiated lateral p-n-p bipolar junction transistors

AU - Tolleson, B. S.

AU - Adell, P. C.

AU - Rax, B.

AU - Barnaby, Hugh

AU - Privat, A.

AU - Han, X.

AU - Mahmud, A.

AU - Livingston, I.

N1 - Funding Information: Manuscript received March 2, 2018; revised April 9, 2018; accepted April 10, 2018. Date of publication April 20, 2018; date of current version August 15, 2018. This work was supported by the NASA Jet Propulsion Laboratory under Grant 1562540. Publisher Copyright: © 1963-2012 IEEE.

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N2 - An improved total ionizing dose model for lateral p-n-p bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.

AB - An improved total ionizing dose model for lateral p-n-p bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.

KW - Base current

KW - bipolar junction transistor (BJT)

KW - current gain

KW - fixed positive oxide charge

KW - interface traps

KW - lateral p-n-p transistor (LPNP)

KW - recombination-generation

KW - surface-recombination velocity

KW - total ionizing dose (TID)

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JF - IEEE Transactions on Nuclear Science

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Improved model for excess base current in irradiated lateral p-n-p bipolar junction transistors

Abstract

Keywords

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