Abstract
An improved total ionizing dose model for lateral PNP bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.
Original language | English (US) |
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Journal | IEEE Transactions on Nuclear Science |
DOIs | |
State | Accepted/In press - Apr 20 2018 |
Keywords
- base current
- bipolar junction transistor
- current gain
- Doping
- fixed positive oxide charge
- Integrated circuit modeling
- interface traps
- Ionizing radiation
- Junctions
- lateral PNP transistor
- Mathematical model
- recombination-generation
- Silicon
- surface recombination velocity
- total ionizing dose
- Transistors
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering