Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors

B. S. Tolleson, P. C. Adell, B. Rax, Hugh Barnaby, A. Privat, X. Han, A. Mahmud, I. Livingston

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

An improved total ionizing dose model for lateral PNP bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.

Original languageEnglish (US)
JournalIEEE Transactions on Nuclear Science
DOIs
StateAccepted/In press - Apr 20 2018

Fingerprint

junction transistors
Bipolar transistors
bipolar transistors
degradation
Radiation
Degradation
dosage
Defects
defects
radiation

Keywords

  • base current
  • bipolar junction transistor
  • current gain
  • Doping
  • fixed positive oxide charge
  • Integrated circuit modeling
  • interface traps
  • Ionizing radiation
  • Junctions
  • lateral PNP transistor
  • Mathematical model
  • recombination-generation
  • Silicon
  • surface recombination velocity
  • total ionizing dose
  • Transistors

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors. / Tolleson, B. S.; Adell, P. C.; Rax, B.; Barnaby, Hugh; Privat, A.; Han, X.; Mahmud, A.; Livingston, I.

In: IEEE Transactions on Nuclear Science, 20.04.2018.

Research output: Contribution to journal › Article

Tolleson, BS, Adell, PC, Rax, B, Barnaby, H, Privat, A, Han, X, Mahmud, A & Livingston, I 2018, 'Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors', IEEE Transactions on Nuclear Science. https://doi.org/10.1109/TNS.2018.2829110
Tolleson BS, Adell PC, Rax B, Barnaby H, Privat A, Han X et al. Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors. IEEE Transactions on Nuclear Science. 2018 Apr 20. https://doi.org/10.1109/TNS.2018.2829110
Tolleson, B. S. ; Adell, P. C. ; Rax, B. ; Barnaby, Hugh ; Privat, A. ; Han, X. ; Mahmud, A. ; Livingston, I. / Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors. In: IEEE Transactions on Nuclear Science. 2018.
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