Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors

B. S. Tolleson; P. C. Adell; B. Rax; Hugh Barnaby; A. Privat; X. Han; A. Mahmud; I. Livingston

doi:10.1109/TNS.2018.2829110

Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors

B. S. Tolleson, P. C. Adell, B. Rax, Hugh Barnaby, A. Privat, X. Han, A. Mahmud, I. Livingston

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

An improved total ionizing dose model for lateral PNP bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.

Original language	English (US)
Journal	IEEE Transactions on Nuclear Science
DOIs	https://doi.org/10.1109/TNS.2018.2829110
State	Accepted/In press - Apr 20 2018

Keywords

base current
bipolar junction transistor
current gain
Doping
fixed positive oxide charge
Integrated circuit modeling
interface traps
Ionizing radiation
Junctions
lateral PNP transistor
Mathematical model
recombination-generation
Silicon
surface recombination velocity
total ionizing dose
Transistors

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TNS.2018.2829110

Fingerprint Dive into the research topics of 'Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors'. Together they form a unique fingerprint.

Cite this

@article{80327cd3c3364e82a304841205cfe0fa,

title = "Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors",

abstract = "An improved total ionizing dose model for lateral PNP bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.",

keywords = "base current, bipolar junction transistor, current gain, Doping, fixed positive oxide charge, Integrated circuit modeling, interface traps, Ionizing radiation, Junctions, lateral PNP transistor, Mathematical model, recombination-generation, Silicon, surface recombination velocity, total ionizing dose, Transistors",

author = "Tolleson, {B. S.} and Adell, {P. C.} and B. Rax and Hugh Barnaby and A. Privat and X. Han and A. Mahmud and I. Livingston",

year = "2018",

month = apr,

day = "20",

doi = "10.1109/TNS.2018.2829110",

language = "English (US)",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors

AU - Tolleson, B. S.

AU - Adell, P. C.

AU - Rax, B.

AU - Barnaby, Hugh

AU - Privat, A.

AU - Han, X.

AU - Mahmud, A.

AU - Livingston, I.

PY - 2018/4/20

Y1 - 2018/4/20

N2 - An improved total ionizing dose model for lateral PNP bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.

AB - An improved total ionizing dose model for lateral PNP bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.

KW - base current

KW - bipolar junction transistor

KW - current gain

KW - Doping

KW - fixed positive oxide charge

KW - Integrated circuit modeling

KW - interface traps

KW - Ionizing radiation

KW - Junctions

KW - lateral PNP transistor

KW - Mathematical model

KW - recombination-generation

KW - Silicon

KW - surface recombination velocity

KW - total ionizing dose

KW - Transistors

UR - http://www.scopus.com/inward/record.url?scp=85045754728&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85045754728&partnerID=8YFLogxK

U2 - 10.1109/TNS.2018.2829110

DO - 10.1109/TNS.2018.2829110

M3 - Article

AN - SCOPUS:85045754728

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

ER -