Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors

B. S. Tolleson, P. C. Adell, B. Rax, Hugh Barnaby, A. Privat, X. Han, A. Mahmud, I. Livingston

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

An improved total ionizing dose model for lateral PNP bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.

Original languageEnglish (US)
JournalIEEE Transactions on Nuclear Science
DOIs
StateAccepted/In press - Apr 20 2018

Fingerprint

junction transistors
Bipolar transistors
bipolar transistors
degradation
Radiation
Degradation
dosage
Defects
defects
radiation

Keywords

  • base current
  • bipolar junction transistor
  • current gain
  • Doping
  • fixed positive oxide charge
  • Integrated circuit modeling
  • interface traps
  • Ionizing radiation
  • Junctions
  • lateral PNP transistor
  • Mathematical model
  • recombination-generation
  • Silicon
  • surface recombination velocity
  • total ionizing dose
  • Transistors

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors. / Tolleson, B. S.; Adell, P. C.; Rax, B.; Barnaby, Hugh; Privat, A.; Han, X.; Mahmud, A.; Livingston, I.

In: IEEE Transactions on Nuclear Science, 20.04.2018.

Research output: Contribution to journal › Article

Tolleson, BS, Adell, PC, Rax, B, Barnaby, H, Privat, A, Han, X, Mahmud, A & Livingston, I 2018, 'Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors', IEEE Transactions on Nuclear Science. https://doi.org/10.1109/TNS.2018.2829110
Tolleson BS, Adell PC, Rax B, Barnaby H, Privat A, Han X et al. Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors. IEEE Transactions on Nuclear Science. 2018 Apr 20. https://doi.org/10.1109/TNS.2018.2829110
Tolleson, B. S. ; Adell, P. C. ; Rax, B. ; Barnaby, Hugh ; Privat, A. ; Han, X. ; Mahmud, A. ; Livingston, I. / Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors. In: IEEE Transactions on Nuclear Science. 2018.
@article{80327cd3c3364e82a304841205cfe0fa,
title = "Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors",
abstract = "An improved total ionizing dose model for lateral PNP bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.",
keywords = "base current, bipolar junction transistor, current gain, Doping, fixed positive oxide charge, Integrated circuit modeling, interface traps, Ionizing radiation, Junctions, lateral PNP transistor, Mathematical model, recombination-generation, Silicon, surface recombination velocity, total ionizing dose, Transistors",
author = "Tolleson, {B. S.} and Adell, {P. C.} and B. Rax and Hugh Barnaby and A. Privat and X. Han and A. Mahmud and I. Livingston",
year = "2018",
month = "4",
day = "20",
doi = "10.1109/TNS.2018.2829110",
language = "English (US)",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors

AU - Tolleson, B. S.

AU - Adell, P. C.

AU - Rax, B.

AU - Barnaby, Hugh

AU - Privat, A.

AU - Han, X.

AU - Mahmud, A.

AU - Livingston, I.

PY - 2018/4/20

Y1 - 2018/4/20

N2 - An improved total ionizing dose model for lateral PNP bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.

AB - An improved total ionizing dose model for lateral PNP bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.

KW - base current

KW - bipolar junction transistor

KW - current gain

KW - Doping

KW - fixed positive oxide charge

KW - Integrated circuit modeling

KW - interface traps

KW - Ionizing radiation

KW - Junctions

KW - lateral PNP transistor

KW - Mathematical model

KW - recombination-generation

KW - Silicon

KW - surface recombination velocity

KW - total ionizing dose

KW - Transistors

UR - http://www.scopus.com/inward/record.url?scp=85045754728&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85045754728&partnerID=8YFLogxK

U2 - 10.1109/TNS.2018.2829110

DO - 10.1109/TNS.2018.2829110

M3 - Article

AN - SCOPUS:85045754728

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

ER -

Access to Document