5 Scopus citations

Abstract

An improved total ionizing dose model for lateral p-n-p bipolar junction transistors is described. The model captures the impact of charged defects on radiation-induced excess base current. Failure to incorporate this mechanism in model underestimates gain degradation.

Original languageEnglish (US)
Article number8344495
Pages (from-to)1488-1495
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume65
Issue number8
DOIs
StatePublished - Aug 2018

Keywords

  • Base current
  • bipolar junction transistor (BJT)
  • current gain
  • fixed positive oxide charge
  • interface traps
  • lateral p-n-p transistor (LPNP)
  • recombination-generation
  • surface-recombination velocity
  • total ionizing dose (TID)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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