Abstract

Thin films of amorphous indium gallium zinc oxide with high transmittance were deposited at room temperature onto flexible polymer substrates. Postdeposition anneals were performed at low temperatures in different ambients to obtain films with one of the highest transmittance and mobility values reported in the literature. As-deposited and postanneal films were characterized for electrical and optical properties. Oxygen anneal degraded the electrical performance of the films, which was recovered by succeeding vacuum anneals. A surface scattering model is proposed to determine the relation between mobility and carrier concentrations at low values of carrier concentrations. This model takes into account electronic scattering as a result of grain structure and morphology.

Original languageEnglish (US)
Pages (from-to)519-524
Number of pages6
JournalJOM
Volume65
Issue number4
DOIs
StatePublished - Apr 2013

Fingerprint

Zinc Oxide
Gallium
Indium
Zinc oxide
Oxide films
Carrier concentration
Surface scattering
Crystal microstructure
Temperature
Polymers
Electric properties
Optical properties
Vacuum
Scattering
Oxygen
Thin films
Substrates

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Improved mobility and transmittance of room-temperature-deposited amorphous indium gallium zinc oxide (a-IGZO) films with low-temperature postfabrication anneals. / Alford, Terry; Gadre, M. J.; Vemuri, Rajitha N P.

In: JOM, Vol. 65, No. 4, 04.2013, p. 519-524.

Research output: Contribution to journalArticle

@article{b26cf98b671d4cf59983c675d2410a29,
title = "Improved mobility and transmittance of room-temperature-deposited amorphous indium gallium zinc oxide (a-IGZO) films with low-temperature postfabrication anneals",
abstract = "Thin films of amorphous indium gallium zinc oxide with high transmittance were deposited at room temperature onto flexible polymer substrates. Postdeposition anneals were performed at low temperatures in different ambients to obtain films with one of the highest transmittance and mobility values reported in the literature. As-deposited and postanneal films were characterized for electrical and optical properties. Oxygen anneal degraded the electrical performance of the films, which was recovered by succeeding vacuum anneals. A surface scattering model is proposed to determine the relation between mobility and carrier concentrations at low values of carrier concentrations. This model takes into account electronic scattering as a result of grain structure and morphology.",
author = "Terry Alford and Gadre, {M. J.} and Vemuri, {Rajitha N P}",
year = "2013",
month = "4",
doi = "10.1007/s11837-013-0569-4",
language = "English (US)",
volume = "65",
pages = "519--524",
journal = "JOM",
issn = "1047-4838",
publisher = "Minerals, Metals and Materials Society",
number = "4",

}

TY - JOUR

T1 - Improved mobility and transmittance of room-temperature-deposited amorphous indium gallium zinc oxide (a-IGZO) films with low-temperature postfabrication anneals

AU - Alford, Terry

AU - Gadre, M. J.

AU - Vemuri, Rajitha N P

PY - 2013/4

Y1 - 2013/4

N2 - Thin films of amorphous indium gallium zinc oxide with high transmittance were deposited at room temperature onto flexible polymer substrates. Postdeposition anneals were performed at low temperatures in different ambients to obtain films with one of the highest transmittance and mobility values reported in the literature. As-deposited and postanneal films were characterized for electrical and optical properties. Oxygen anneal degraded the electrical performance of the films, which was recovered by succeeding vacuum anneals. A surface scattering model is proposed to determine the relation between mobility and carrier concentrations at low values of carrier concentrations. This model takes into account electronic scattering as a result of grain structure and morphology.

AB - Thin films of amorphous indium gallium zinc oxide with high transmittance were deposited at room temperature onto flexible polymer substrates. Postdeposition anneals were performed at low temperatures in different ambients to obtain films with one of the highest transmittance and mobility values reported in the literature. As-deposited and postanneal films were characterized for electrical and optical properties. Oxygen anneal degraded the electrical performance of the films, which was recovered by succeeding vacuum anneals. A surface scattering model is proposed to determine the relation between mobility and carrier concentrations at low values of carrier concentrations. This model takes into account electronic scattering as a result of grain structure and morphology.

UR - http://www.scopus.com/inward/record.url?scp=84876689502&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876689502&partnerID=8YFLogxK

U2 - 10.1007/s11837-013-0569-4

DO - 10.1007/s11837-013-0569-4

M3 - Article

AN - SCOPUS:84876689502

VL - 65

SP - 519

EP - 524

JO - JOM

JF - JOM

SN - 1047-4838

IS - 4

ER -