Improved mobility and transmittance of room-temperature-deposited amorphous indium gallium zinc oxide (a-IGZO) films with low-temperature postfabrication anneals

Terry Alford; M. J. Gadre; Rajitha N P Vemuri

doi:10.1007/s11837-013-0569-4

Improved mobility and transmittance of room-temperature-deposited amorphous indium gallium zinc oxide (a-IGZO) films with low-temperature postfabrication anneals

Terry Alford, M. J. Gadre, Rajitha N P Vemuri

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Thin films of amorphous indium gallium zinc oxide with high transmittance were deposited at room temperature onto flexible polymer substrates. Postdeposition anneals were performed at low temperatures in different ambients to obtain films with one of the highest transmittance and mobility values reported in the literature. As-deposited and postanneal films were characterized for electrical and optical properties. Oxygen anneal degraded the electrical performance of the films, which was recovered by succeeding vacuum anneals. A surface scattering model is proposed to determine the relation between mobility and carrier concentrations at low values of carrier concentrations. This model takes into account electronic scattering as a result of grain structure and morphology.

Original language	English (US)
Pages (from-to)	519-524
Number of pages	6
Journal	JOM
Volume	65
Issue number	4
DOIs	https://doi.org/10.1007/s11837-013-0569-4
State	Published - Apr 2013

ASJC Scopus subject areas

General Materials Science
General Engineering

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title = "Improved mobility and transmittance of room-temperature-deposited amorphous indium gallium zinc oxide (a-IGZO) films with low-temperature postfabrication anneals",

abstract = "Thin films of amorphous indium gallium zinc oxide with high transmittance were deposited at room temperature onto flexible polymer substrates. Postdeposition anneals were performed at low temperatures in different ambients to obtain films with one of the highest transmittance and mobility values reported in the literature. As-deposited and postanneal films were characterized for electrical and optical properties. Oxygen anneal degraded the electrical performance of the films, which was recovered by succeeding vacuum anneals. A surface scattering model is proposed to determine the relation between mobility and carrier concentrations at low values of carrier concentrations. This model takes into account electronic scattering as a result of grain structure and morphology.",

author = "Terry Alford and Gadre, {M. J.} and Vemuri, {Rajitha N P}",

note = "Funding Information: This work was partially supported by the National Science Foundation (C. Ying) (Grant No. DMR-0602716) for which the authors are greatly indebted. Copyright: Copyright 2013 Elsevier B.V., All rights reserved.",

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doi = "10.1007/s11837-013-0569-4",

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AU - Gadre, M. J.

AU - Vemuri, Rajitha N P

N1 - Funding Information: This work was partially supported by the National Science Foundation (C. Ying) (Grant No. DMR-0602716) for which the authors are greatly indebted. Copyright: Copyright 2013 Elsevier B.V., All rights reserved.

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N2 - Thin films of amorphous indium gallium zinc oxide with high transmittance were deposited at room temperature onto flexible polymer substrates. Postdeposition anneals were performed at low temperatures in different ambients to obtain films with one of the highest transmittance and mobility values reported in the literature. As-deposited and postanneal films were characterized for electrical and optical properties. Oxygen anneal degraded the electrical performance of the films, which was recovered by succeeding vacuum anneals. A surface scattering model is proposed to determine the relation between mobility and carrier concentrations at low values of carrier concentrations. This model takes into account electronic scattering as a result of grain structure and morphology.

AB - Thin films of amorphous indium gallium zinc oxide with high transmittance were deposited at room temperature onto flexible polymer substrates. Postdeposition anneals were performed at low temperatures in different ambients to obtain films with one of the highest transmittance and mobility values reported in the literature. As-deposited and postanneal films were characterized for electrical and optical properties. Oxygen anneal degraded the electrical performance of the films, which was recovered by succeeding vacuum anneals. A surface scattering model is proposed to determine the relation between mobility and carrier concentrations at low values of carrier concentrations. This model takes into account electronic scattering as a result of grain structure and morphology.

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Improved mobility and transmittance of room-temperature-deposited amorphous indium gallium zinc oxide (a-IGZO) films with low-temperature postfabrication anneals

Abstract

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