Improved Measurement of Doping Profiles in Silicon Using CV Techniques

Ian G. McGillivray; John M. Robertson; Anthony J. Walton

doi:10.1109/16.2437

Improved Measurement of Doping Profiles in Silicon Using CV Techniques

Ian G. McGillivray, John M. Robertson, Anthony J. Walton

Arizona State University

Research output: Contribution to journal › Article

11 Scopus citations

Abstract

One of the problems of doping profile measurements using CV techniques is that numerical differentiation is required. This can, under certain circumstances, result in very noisy profiles. This paper presents a method of obtaining noise-free profiles by choosing a step size that takes account of the resolution of the capacitance meter to ensure that the maximum profile detail is retained. A range of other factors that can effect profiling accuracy are also reviewed.

Original language	English (US)
Pages (from-to)	174-179
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	35
Issue number	2
DOIs	https://doi.org/10.1109/16.2437
State	Published - Feb 1988

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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McGillivray, I. G., Robertson, J. M., & Walton, A. J. (1988). Improved Measurement of Doping Profiles in Silicon Using CV Techniques. IEEE Transactions on Electron Devices, 35(2), 174-179. https://doi.org/10.1109/16.2437

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