Improved Measurement of Doping Profiles in Silicon Using CV Techniques

Ian G. McGillivray, John M. Robertson, Anthony J. Walton

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

One of the problems of doping profile measurements using CV techniques is that numerical differentiation is required. This can, under certain circumstances, result in very noisy profiles. This paper presents a method of obtaining noise-free profiles by choosing a step size that takes account of the resolution of the capacitance meter to ensure that the maximum profile detail is retained. A range of other factors that can effect profiling accuracy are also reviewed.

Original languageEnglish (US)
Pages (from-to)174-179
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume35
Issue number2
DOIs
StatePublished - Feb 1988

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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