Improved hole transport by p-InxGa1-xN Layer in Multiple Quantum Wells of Visible LEDs

Jeomoh Kim; Mi Hee Ji; Zachary Lochner; Suk Choi; Nordine Sebkhi; Jianping Liu; Md M. Satter; Jin Soo Kim; P. Douglas Yoder; Russell D. Dupuis; Reid Juday; Alec M. Fischer; Fernando Ponce; Jae Hyun Ryou

doi:10.1109/LPT.2013.2275791

Improved hole transport by p-In_xGa_1-xN Layer in Multiple Quantum Wells of Visible LEDs

Jeomoh Kim, Mi Hee Ji, Zachary Lochner, Suk Choi, Nordine Sebkhi, Jianping Liu, Md M. Satter, Jin Soo Kim, P. Douglas Yoder, Russell D. Dupuis, Reid Juday, Alec M. Fischer, Fernando Ponce, Jae Hyun Ryou

Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Studied is the effect of indium (In) mole fraction in _xGa _1-xN:Mg layers with 0≤ _xIn≤0.035 on hole injection and transport behaviors in InGaN/GaN multiple quantum wells (MQWs) using dual-wavelength and triple-wavelength active regions. Electro-optical characteristics of light-emitting diodes containing p-layers with different In content and with silicon doping in selected QW barriers (QWBs) are compared to evaluate hole transport in the active region. The results show that enhanced hole transport and corresponding more uniform distribution of holes across the MQW region are achieved by increasing_x In in the p-In_x Ga_1-x N: Mg layer, possibly due to modification in energy of holes by a potential barrier between the p-InGaN and GaN QWB.

Original language	English (US)
Article number	6572864
Pages (from-to)	1789-1792
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	25
Issue number	18
DOIs	https://doi.org/10.1109/LPT.2013.2275791
State	Published - 2013

Keywords

Epitaxial growth
light emitting diodes
luminescence

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2013.2275791

Cite this

Kim, J., Ji, M. H., Lochner, Z., Choi, S., Sebkhi, N., Liu, J., Satter, M. M., Kim, J. S., Yoder, P. D., Dupuis, R. D., Juday, R., Fischer, A. M., Ponce, F., & Ryou, J. H. (2013). Improved hole transport by p-In_xGa_1-xN Layer in Multiple Quantum Wells of Visible LEDs. IEEE Photonics Technology Letters, 25(18), 1789-1792. Article 6572864. https://doi.org/10.1109/LPT.2013.2275791

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title = "Improved hole transport by p-InxGa1-xN Layer in Multiple Quantum Wells of Visible LEDs",

abstract = "Studied is the effect of indium (In) mole fraction in xGa 1-xN:Mg layers with 0≤ xIn≤0.035 on hole injection and transport behaviors in InGaN/GaN multiple quantum wells (MQWs) using dual-wavelength and triple-wavelength active regions. Electro-optical characteristics of light-emitting diodes containing p-layers with different In content and with silicon doping in selected QW barriers (QWBs) are compared to evaluate hole transport in the active region. The results show that enhanced hole transport and corresponding more uniform distribution of holes across the MQW region are achieved by increasingx In in the p-Inx Ga1-x N: Mg layer, possibly due to modification in energy of holes by a potential barrier between the p-InGaN and GaN QWB.",

keywords = "Epitaxial growth, light emitting diodes, luminescence",

author = "Jeomoh Kim and Ji, {Mi Hee} and Zachary Lochner and Suk Choi and Nordine Sebkhi and Jianping Liu and Satter, {Md M.} and Kim, {Jin Soo} and Yoder, {P. Douglas} and Dupuis, {Russell D.} and Reid Juday and Fischer, {Alec M.} and Fernando Ponce and Ryou, {Jae Hyun}",

year = "2013",

doi = "10.1109/LPT.2013.2275791",

language = "English (US)",

volume = "25",

pages = "1789--1792",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Improved hole transport by p-InxGa1-xN Layer in Multiple Quantum Wells of Visible LEDs

AU - Kim, Jeomoh

AU - Ji, Mi Hee

AU - Lochner, Zachary

AU - Choi, Suk

AU - Sebkhi, Nordine

AU - Liu, Jianping

AU - Satter, Md M.

AU - Kim, Jin Soo

AU - Yoder, P. Douglas

AU - Dupuis, Russell D.

AU - Juday, Reid

AU - Fischer, Alec M.

AU - Ponce, Fernando

AU - Ryou, Jae Hyun

PY - 2013

Y1 - 2013

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AB - Studied is the effect of indium (In) mole fraction in xGa 1-xN:Mg layers with 0≤ xIn≤0.035 on hole injection and transport behaviors in InGaN/GaN multiple quantum wells (MQWs) using dual-wavelength and triple-wavelength active regions. Electro-optical characteristics of light-emitting diodes containing p-layers with different In content and with silicon doping in selected QW barriers (QWBs) are compared to evaluate hole transport in the active region. The results show that enhanced hole transport and corresponding more uniform distribution of holes across the MQW region are achieved by increasingx In in the p-Inx Ga1-x N: Mg layer, possibly due to modification in energy of holes by a potential barrier between the p-InGaN and GaN QWB.

KW - Epitaxial growth

KW - light emitting diodes

KW - luminescence

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