TY - JOUR
T1 - Improved fill-factor for the double-sided buried-contact bifacial silicon solar cell
AU - Ghozati, S. B.
AU - Ebong, A. U.
AU - Honsberg, C. B.
AU - Wenham, S. R.
N1 - Funding Information:
The contributions of many members of the Centre for Photovoltaic Devices and Systems are acknowledged. In particular, the efforts of Fei Yun, Ximing Dai, Ying Hui Tang, Jianhua Zhao, Aihua Wang, Martin Green, and the members of the support team, have been greatly appreciated. This work has been directly supported by the Australian Research Council and the New South Wales Office of Energy and the Energy Research and Development Corporation. The Centre for Photovoltaic Devices and Systems is supported by the Australian Research Council and Pacific Power.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 1998/2/24
Y1 - 1998/2/24
N2 - Despite the commercial success of buried-contact solar cells, the performance of early generations of these devices has been limited by an effective high rear-surface recombination velocity. For a number of years, the double-sided buried-contact bifacial (DSBCB) solar cells have demonstrated improved rear-surface passivation with corresponding improvements in current and voltage. In the past, however, the fill factors of these devices have been significantly degraded due to shunting of the rear floating junction. These limitations have been overcome through the use of much higher sheet resistivities for the rear n-type layer. Experimental devices based on this new approach have achieved fill factors approaching 82% while simultaneously achieving open-circuit voltages in the vicinity of 670 mV. Efficiencies in the range 17-18% without texturing, anti-reflection coatings, any form of light trapping, or even rear reflector have been achieved on float-zone material.
AB - Despite the commercial success of buried-contact solar cells, the performance of early generations of these devices has been limited by an effective high rear-surface recombination velocity. For a number of years, the double-sided buried-contact bifacial (DSBCB) solar cells have demonstrated improved rear-surface passivation with corresponding improvements in current and voltage. In the past, however, the fill factors of these devices have been significantly degraded due to shunting of the rear floating junction. These limitations have been overcome through the use of much higher sheet resistivities for the rear n-type layer. Experimental devices based on this new approach have achieved fill factors approaching 82% while simultaneously achieving open-circuit voltages in the vicinity of 670 mV. Efficiencies in the range 17-18% without texturing, anti-reflection coatings, any form of light trapping, or even rear reflector have been achieved on float-zone material.
KW - Bifacial silicon solar cell
KW - Fill-factor
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U2 - 10.1016/S0927-0248(97)00210-9
DO - 10.1016/S0927-0248(97)00210-9
M3 - Article
AN - SCOPUS:0032000517
SN - 0927-0248
VL - 51
SP - 121
EP - 128
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
IS - 2
ER -