Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

A. Descoeudres, L. Barraud, Stefaan De Wolf, B. Strahm, D. Lachenal, C. Guérin, Zachary Holman, F. Zicarelli, B. Demaurex, J. Seif, J. Holovsky, C. Ballif

Research output: Contribution to journalArticle

165 Citations (Scopus)

Abstract

Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si:H) layers deposited by plasma-enhanced chemical vapor deposition. We show a dramatic improvement in passivation when H2 plasma treatments are used during film deposition. Although the bulk of the a-Si:H layers is slightly more disordered after H2 treatment, the hydrogenation of the wafer/film interface is nevertheless improved with as-deposited layers. Employing H2 treatments, 4 cm2 heterojunction solar cells were produced with industry-compatible processes, yielding open-circuit voltages up to 725 mV and aperture area efficiencies up to 21.

Original languageEnglish (US)
Article number123506
JournalApplied Physics Letters
Volume99
Issue number12
DOIs
StatePublished - Sep 19 2011
Externally publishedYes

Fingerprint

hydrogen plasma
passivity
open circuit voltage
heterojunctions
silicon
solar cells
wafers
hydrogenation
amorphous silicon
high voltages
apertures
industries
vapor deposition

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Descoeudres, A., Barraud, L., De Wolf, S., Strahm, B., Lachenal, D., Guérin, C., ... Ballif, C. (2011). Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment. Applied Physics Letters, 99(12), [123506]. https://doi.org/10.1063/1.3641899

Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment. / Descoeudres, A.; Barraud, L.; De Wolf, Stefaan; Strahm, B.; Lachenal, D.; Guérin, C.; Holman, Zachary; Zicarelli, F.; Demaurex, B.; Seif, J.; Holovsky, J.; Ballif, C.

In: Applied Physics Letters, Vol. 99, No. 12, 123506, 19.09.2011.

Research output: Contribution to journalArticle

Descoeudres, A, Barraud, L, De Wolf, S, Strahm, B, Lachenal, D, Guérin, C, Holman, Z, Zicarelli, F, Demaurex, B, Seif, J, Holovsky, J & Ballif, C 2011, 'Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment', Applied Physics Letters, vol. 99, no. 12, 123506. https://doi.org/10.1063/1.3641899
Descoeudres A, Barraud L, De Wolf S, Strahm B, Lachenal D, Guérin C et al. Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment. Applied Physics Letters. 2011 Sep 19;99(12). 123506. https://doi.org/10.1063/1.3641899
Descoeudres, A. ; Barraud, L. ; De Wolf, Stefaan ; Strahm, B. ; Lachenal, D. ; Guérin, C. ; Holman, Zachary ; Zicarelli, F. ; Demaurex, B. ; Seif, J. ; Holovsky, J. ; Ballif, C. / Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment. In: Applied Physics Letters. 2011 ; Vol. 99, No. 12.
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