Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

A. Descoeudres, L. Barraud, Stefaan De Wolf, B. Strahm, D. Lachenal, C. Guérin, Z. C. Holman, F. Zicarelli, B. Demaurex, J. Seif, J. Holovsky, C. Ballif

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Abstract

Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si:H) layers deposited by plasma-enhanced chemical vapor deposition. We show a dramatic improvement in passivation when H2 plasma treatments are used during film deposition. Although the bulk of the a-Si:H layers is slightly more disordered after H2 treatment, the hydrogenation of the wafer/film interface is nevertheless improved with as-deposited layers. Employing H2 treatments, 4 cm2 heterojunction solar cells were produced with industry-compatible processes, yielding open-circuit voltages up to 725 mV and aperture area efficiencies up to 21.

Original languageEnglish (US)
Article number123506
JournalApplied Physics Letters
Volume99
Issue number12
DOIs
StatePublished - Sep 19 2011

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Descoeudres, A., Barraud, L., De Wolf, S., Strahm, B., Lachenal, D., Guérin, C., Holman, Z. C., Zicarelli, F., Demaurex, B., Seif, J., Holovsky, J., & Ballif, C. (2011). Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment. Applied Physics Letters, 99(12), [123506]. https://doi.org/10.1063/1.3641899