Abstract

We investigate the influence of the gate-voltage dependence of the polarization charge on the electron sheet charge density in the channel and how it reflects on the device transfer and output characteristics in GaN HEMTs. We find that a 10% increase in the polarization charge is needed to match the experimental data when the gate-voltage dependence of the polarization charge is included in the theoretical model. This information is important for calibration in commercial device simulators and for better understanding of the quality of the GaN/AlGaN interface.

Original languageEnglish (US)
Pages (from-to)998-1006
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume56
Issue number5
DOIs
StatePublished - 2009

Fingerprint

High electron mobility transistors
Polarization
Electric potential
Charge density
Simulators
Calibration
Electrons

Keywords

  • GaN devices
  • Gate-voltage dependence
  • Polarization charge

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Importance of the gate-dependent polarization charge on the operation of GaN HEMTs. / Ashok, Ashwin; Vasileska, Dragica; Goodnick, Stephen; Hartin, Olin L.

In: IEEE Transactions on Electron Devices, Vol. 56, No. 5, 2009, p. 998-1006.

Research output: Contribution to journalArticle

@article{47f21e7402c14cd08d38698078de987f,
title = "Importance of the gate-dependent polarization charge on the operation of GaN HEMTs",
abstract = "We investigate the influence of the gate-voltage dependence of the polarization charge on the electron sheet charge density in the channel and how it reflects on the device transfer and output characteristics in GaN HEMTs. We find that a 10{\%} increase in the polarization charge is needed to match the experimental data when the gate-voltage dependence of the polarization charge is included in the theoretical model. This information is important for calibration in commercial device simulators and for better understanding of the quality of the GaN/AlGaN interface.",
keywords = "GaN devices, Gate-voltage dependence, Polarization charge",
author = "Ashwin Ashok and Dragica Vasileska and Stephen Goodnick and Hartin, {Olin L.}",
year = "2009",
doi = "10.1109/TED.2009.2015822",
language = "English (US)",
volume = "56",
pages = "998--1006",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

TY - JOUR

T1 - Importance of the gate-dependent polarization charge on the operation of GaN HEMTs

AU - Ashok, Ashwin

AU - Vasileska, Dragica

AU - Goodnick, Stephen

AU - Hartin, Olin L.

PY - 2009

Y1 - 2009

N2 - We investigate the influence of the gate-voltage dependence of the polarization charge on the electron sheet charge density in the channel and how it reflects on the device transfer and output characteristics in GaN HEMTs. We find that a 10% increase in the polarization charge is needed to match the experimental data when the gate-voltage dependence of the polarization charge is included in the theoretical model. This information is important for calibration in commercial device simulators and for better understanding of the quality of the GaN/AlGaN interface.

AB - We investigate the influence of the gate-voltage dependence of the polarization charge on the electron sheet charge density in the channel and how it reflects on the device transfer and output characteristics in GaN HEMTs. We find that a 10% increase in the polarization charge is needed to match the experimental data when the gate-voltage dependence of the polarization charge is included in the theoretical model. This information is important for calibration in commercial device simulators and for better understanding of the quality of the GaN/AlGaN interface.

KW - GaN devices

KW - Gate-voltage dependence

KW - Polarization charge

UR - http://www.scopus.com/inward/record.url?scp=67349113403&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67349113403&partnerID=8YFLogxK

U2 - 10.1109/TED.2009.2015822

DO - 10.1109/TED.2009.2015822

M3 - Article

VL - 56

SP - 998

EP - 1006

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 5

ER -