Abstract

We investigate the influence of the gate-voltage dependence of the polarization charge on the electron-sheet density in the channel and how it reflects on the device transfer and output characteristics. We also investigate the role of the electron-electron interaction on the magnitude of the drain current. We find that 10% increase in the polarization charge is needed to match the experimental data when these two effects are included in the theoretical model.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Pages97-98
Number of pages2
DOIs
StatePublished - Dec 1 2009
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: Jul 27 2008Aug 1 2008

Publication series

NameAIP Conference Proceedings
Volume1199
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other29th International Conference on Physics of Semiconductors, ICPS 29
CountryBrazil
CityRio de Janeiro
Period7/27/088/1/08

Keywords

  • Electron-electron interactions
  • GaN devices
  • Gate dependence
  • Polarization charge

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Ashok, A., Vasileska, D., Goodnick, S., & Hartin, O. (2009). Importance of the gate-dependent polarization charge and the electron-electron interactions on the operation of GaN HEMTs. In Physics of Semiconductors - 29th International Conference, ICPS 29 (pp. 97-98). (AIP Conference Proceedings; Vol. 1199). https://doi.org/10.1063/1.3295571