@inproceedings{ec284c9971cd4c9b8b6b814c5f6b5e6f,
title = "Importance of the gate-dependent polarization charge and the electron-electron interactions on the operation of GaN HEMTs",
abstract = "We investigate the influence of the gate-voltage dependence of the polarization charge on the electron-sheet density in the channel and how it reflects on the device transfer and output characteristics. We also investigate the role of the electron-electron interaction on the magnitude of the drain current. We find that 10% increase in the polarization charge is needed to match the experimental data when these two effects are included in the theoretical model.",
keywords = "Electron-electron interactions, GaN devices, Gate dependence, Polarization charge",
author = "Ashwin Ashok and Dragica Vasileska and Stephen Goodnick and Olin Hartin",
year = "2009",
doi = "10.1063/1.3295571",
language = "English (US)",
isbn = "9780735407367",
series = "AIP Conference Proceedings",
pages = "97--98",
booktitle = "Physics of Semiconductors - 29th International Conference, ICPS 29",
note = "29th International Conference on Physics of Semiconductors, ICPS 29 ; Conference date: 27-07-2008 Through 01-08-2008",
}