Abstract

There are two assumptions made in the derivation of the Fermi's Golden Rule: (1) it is assumed that the scattering is infrequent which allows us to impose the long time limit and arrive at the energy conserving delta function, and (2) collision duration time is assumed to be zero, which implies that the intra-collisional field effect is neglected. The assumption (1) basically means that collisional broadening of the states (CBS) is being ignored in many analyses of deep-submicrometer devices. But when is that assumption valid? This is the point we want to address here. For that purpose we investigate the effect of CBS on three different technologies of MOSFET devices with substrate doping densities equal to 10 17cm -3, 5×10 17cm -3, and 10 18cm -3.

Original languageEnglish (US)
Title of host publicationTechnical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
Pages701-704
Number of pages4
StatePublished - 2012
EventNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States
Duration: Jun 18 2012Jun 21 2012

Other

OtherNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
CountryUnited States
CitySanta Clara, CA
Period6/18/126/21/12

Fingerprint

Delta functions
MOSFET devices
Doping (additives)
Scattering
Substrates

Keywords

  • Collisional broadening of the states
  • DOS function
  • Scattering

ASJC Scopus subject areas

  • Ceramics and Composites
  • Surfaces, Coatings and Films

Cite this

Kannan, G., & Vasileska, D. (2012). Importance of the collisional broadening of the states across MOSFET technology generations. In Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 (pp. 701-704)

Importance of the collisional broadening of the states across MOSFET technology generations. / Kannan, Gokula; Vasileska, Dragica.

Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. 2012. p. 701-704.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kannan, G & Vasileska, D 2012, Importance of the collisional broadening of the states across MOSFET technology generations. in Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. pp. 701-704, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012, Santa Clara, CA, United States, 6/18/12.
Kannan G, Vasileska D. Importance of the collisional broadening of the states across MOSFET technology generations. In Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. 2012. p. 701-704
Kannan, Gokula ; Vasileska, Dragica. / Importance of the collisional broadening of the states across MOSFET technology generations. Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. 2012. pp. 701-704
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