@inproceedings{5eb5daf79901424aa412e63d7be645a7,
title = "Importance of the collisional broadening of the states across MOSFET technology generations",
abstract = "There are two assumptions made in the derivation of the Fermi's Golden Rule: (1) it is assumed that the scattering is infrequent which allows us to impose the long time limit and arrive at the energy conserving delta function, and (2) collision duration time is assumed to be zero, which implies that the intra-collisional field effect is neglected. The assumption (1) basically means that collisional broadening of the states (CBS) is being ignored in many analyses of deep-submicrometer devices. But when is that assumption valid? This is the point we want to address here. For that purpose we investigate the effect of CBS on three different technologies of MOSFET devices with substrate doping densities equal to 10 17cm -3, 5×10 17cm -3, and 10 18cm -3.",
keywords = "Collisional broadening of the states, DOS function, Scattering",
author = "Gokula Kannan and Dragica Vasileska",
year = "2012",
language = "English (US)",
isbn = "9781466562752",
series = "Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012",
pages = "701--704",
booktitle = "Nanotechnology 2012",
note = "Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 ; Conference date: 18-06-2012 Through 21-06-2012",
}