Implementation of surface roughness scattering in Monte Carlo modeling of thin SOI MOSFETs using the effective potential

Stephen M. Ramey, David K. Ferry

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

In Monte Carlo simulations of carriers in confined layers, quantum mechanical effects render ineffective the reflection boundary condition method of including surface roughness scattering. Therefore, to include the effects of both the quantum confinement and surface roughness in thin silicon on insulator (SOI) MOSFETs, the surface roughness must be handled differently. In this paper, we include the surface roughness as an additional scattering mechanism in a three-dimensional Poisson-ensemble Monte Carlo simulation that includes the quantum mechanical effects with the effective potential. We find that this method yields appropriate results for both the quantum confinement and surface roughness, provided adequate steps are taken when implementing the surface roughness scattering rate.

Original languageEnglish (US)
Pages (from-to)110-114
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume2
Issue number2
DOIs
StatePublished - Jun 2003

Fingerprint

Surface roughness
Scattering
Silicon
Quantum confinement
Boundary conditions
Monte Carlo simulation

Keywords

  • Monte Carlo methods
  • MOSFETs
  • Quantum theory
  • Semiconductor-insulator interfaces
  • Silicon on insulator (SOI) technology

ASJC Scopus subject areas

  • Engineering(all)
  • Hardware and Architecture

Cite this

Implementation of surface roughness scattering in Monte Carlo modeling of thin SOI MOSFETs using the effective potential. / Ramey, Stephen M.; Ferry, David K.

In: IEEE Transactions on Nanotechnology, Vol. 2, No. 2, 06.2003, p. 110-114.

Research output: Contribution to journalArticle

@article{4dee3d726fd64432846c16190c00a8e4,
title = "Implementation of surface roughness scattering in Monte Carlo modeling of thin SOI MOSFETs using the effective potential",
abstract = "In Monte Carlo simulations of carriers in confined layers, quantum mechanical effects render ineffective the reflection boundary condition method of including surface roughness scattering. Therefore, to include the effects of both the quantum confinement and surface roughness in thin silicon on insulator (SOI) MOSFETs, the surface roughness must be handled differently. In this paper, we include the surface roughness as an additional scattering mechanism in a three-dimensional Poisson-ensemble Monte Carlo simulation that includes the quantum mechanical effects with the effective potential. We find that this method yields appropriate results for both the quantum confinement and surface roughness, provided adequate steps are taken when implementing the surface roughness scattering rate.",
keywords = "Monte Carlo methods, MOSFETs, Quantum theory, Semiconductor-insulator interfaces, Silicon on insulator (SOI) technology",
author = "Ramey, {Stephen M.} and Ferry, {David K.}",
year = "2003",
month = "6",
doi = "10.1109/TNANO.2003.812585",
language = "English (US)",
volume = "2",
pages = "110--114",
journal = "IEEE Transactions on Nanotechnology",
issn = "1536-125X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Implementation of surface roughness scattering in Monte Carlo modeling of thin SOI MOSFETs using the effective potential

AU - Ramey, Stephen M.

AU - Ferry, David K.

PY - 2003/6

Y1 - 2003/6

N2 - In Monte Carlo simulations of carriers in confined layers, quantum mechanical effects render ineffective the reflection boundary condition method of including surface roughness scattering. Therefore, to include the effects of both the quantum confinement and surface roughness in thin silicon on insulator (SOI) MOSFETs, the surface roughness must be handled differently. In this paper, we include the surface roughness as an additional scattering mechanism in a three-dimensional Poisson-ensemble Monte Carlo simulation that includes the quantum mechanical effects with the effective potential. We find that this method yields appropriate results for both the quantum confinement and surface roughness, provided adequate steps are taken when implementing the surface roughness scattering rate.

AB - In Monte Carlo simulations of carriers in confined layers, quantum mechanical effects render ineffective the reflection boundary condition method of including surface roughness scattering. Therefore, to include the effects of both the quantum confinement and surface roughness in thin silicon on insulator (SOI) MOSFETs, the surface roughness must be handled differently. In this paper, we include the surface roughness as an additional scattering mechanism in a three-dimensional Poisson-ensemble Monte Carlo simulation that includes the quantum mechanical effects with the effective potential. We find that this method yields appropriate results for both the quantum confinement and surface roughness, provided adequate steps are taken when implementing the surface roughness scattering rate.

KW - Monte Carlo methods

KW - MOSFETs

KW - Quantum theory

KW - Semiconductor-insulator interfaces

KW - Silicon on insulator (SOI) technology

UR - http://www.scopus.com/inward/record.url?scp=2542503203&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2542503203&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2003.812585

DO - 10.1109/TNANO.2003.812585

M3 - Article

VL - 2

SP - 110

EP - 114

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

SN - 1536-125X

IS - 2

ER -