Implementation of separable scattering mechanisms in three-dimensional quantum mechanical simulations of a silicon quantum wire

M. J. Gilbert, R. Akis, D. K. Ferry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a numerical scheme through which different phonon scattering processes can be incorporated into the quantum mechanical simulation of semiconductor devices. This method allows the effects of different phonon processes to be seen individually and without resorting to the use of fitting parameters to approximate the correct physics. We derive equations to include acoustic deformation potential scattering and intervalley phonon scattering accounting for both f- and g- type processes. Using this method we show that we are able to extract the correct mobility for bulk silicon at several different doping densities. The method is then applied to a gated silicon-on-insulator quantum wire device to illustrate the key deviations from the ballistic case that result from the inclusion of these two phonon scattering processes in quantum confined systems.

Original languageEnglish (US)
Title of host publication2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings
EditorsM. Laudon, B. Romanowicz
Pages229-231
Number of pages3
StatePublished - Dec 1 2005
Event2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 - Anaheim, CA, United States
Duration: May 8 2005May 12 2005

Publication series

Name2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings

Other

Other2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005
CountryUnited States
CityAnaheim, CA
Period5/8/055/12/05

Keywords

  • MOSFET
  • Quantum wire
  • Scattering
  • Silicon
  • Simulation

ASJC Scopus subject areas

  • Engineering(all)

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