IMPLANTATION AND ION BEAM MIXING IN THIN FILM ANALYSIS.

Peter Williams, Judith E. Baker

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

In thin film analyses obtained using sputtering techniques, primary ion implantation and ion beam mixing effects frequently produce significant alteration of the substrate before it can be sampled by the sputtering front. The present state of qualitative and quantitative understanding of these effects is discussed, with particular reference to: ion yield matrix effects and interface transients in secondary ion mass spectrometry, reduction of overlayer sputter rates due to ion beam mixing, the role of ion beam mixing in preferential sputtering, and the use of ion beam mixing to allow quantitative analysis of interfacial layers.

Original languageEnglish (US)
Pages (from-to)15-24
Number of pages10
JournalNuclear Instruments and Methods
Volume182
Issue number183/pt 1
DOIs
StatePublished - Apr 1980
Externally publishedYes

Fingerprint

Ion beams
Ions
Sputtering
Thin films
Secondary ion mass spectrometry
Secondary Ion Mass Spectrometry
Ion implantation
Substrates
Chemical analysis

ASJC Scopus subject areas

  • Engineering(all)

Cite this

IMPLANTATION AND ION BEAM MIXING IN THIN FILM ANALYSIS. / Williams, Peter; Baker, Judith E.

In: Nuclear Instruments and Methods, Vol. 182 , No. 183/pt 1, 04.1980, p. 15-24.

Research output: Contribution to journalArticle

Williams, Peter ; Baker, Judith E. / IMPLANTATION AND ION BEAM MIXING IN THIN FILM ANALYSIS. In: Nuclear Instruments and Methods. 1980 ; Vol. 182 , No. 183/pt 1. pp. 15-24.
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