Abstract

In this letter, the impedance behavior of Cu-SiO2 programmable metallization cell devices containing a thin oxide switching layer is presented. Frequency sweeps were performed during impedance spectroscopy on devices with different diameters and a range of programmed resistance states. The experimental results show that these devices can be modeled electrically as a constant capacitor connected in parallel with a variable resistor. This parallel RC equivalent model was verified with SPICE circuit simulations.

Original languageEnglish (US)
Article number7433974
Pages (from-to)576-579
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number5
DOIs
StatePublished - May 1 2016

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Keywords

  • CBRAM
  • Cu
  • equivalent circuit
  • impedance spectroscopy
  • non-volatile memory
  • PMC
  • resistive switching
  • silicon dioxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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