Impedance measurement and characterization of Ag-Ge30Se70-based programmable metallization cells

Debayan Mahalanabis; Yago Gonzalez Velo; Hugh Barnaby; Michael Kozicki; Pradeep Dandamudi; Sarma Vrudhula

doi:10.1109/TED.2014.2358573

Impedance measurement and characterization of Ag-Ge₃₀Se₇₀-based programmable metallization cells

Debayan Mahalanabis, Yago Gonzalez Velo, Hugh Barnaby, Michael Kozicki, Pradeep Dandamudi, Sarma Vrudhula

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Chalcogenide glass-based programmable metallization cell (PMC) devices undergo Ag⁺-ion transport and controlled resistance change under the application of electrical bias. In this paper, photo-doped PMC devices are characterized with impedance spectroscopy. Photo doping is an important step in PMC fabrication as it introduces the mobile Ag into the electrolyte and, therefore, has a significant effect on device characteristics. Data obtained from measurements on devices with different areas in both their high resistance state (HRS) and low resistance state (LRS) are used to parameterize equivalent circuit models. The models elucidate the differences in the HRS and LRS electrical properties.

Original language	English (US)
Article number	6912973
Pages (from-to)	3723-3730
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	11
DOIs	https://doi.org/10.1109/TED.2014.2358573
State	Published - Nov 1 2014

Keywords

Chalcogenide (ChG)
electrochemical memory cell
electrochemical metallization memory (ECM)
impedance spectra
nanoionic memory
photo doping
programmable metallization cells (PMCs)
resistive switching random access memory (ReRAM)
solid-state electrolyte

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2014.2358573

Cite this

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title = "Impedance measurement and characterization of Ag-Ge30Se70-based programmable metallization cells",

abstract = "Chalcogenide glass-based programmable metallization cell (PMC) devices undergo Ag+-ion transport and controlled resistance change under the application of electrical bias. In this paper, photo-doped PMC devices are characterized with impedance spectroscopy. Photo doping is an important step in PMC fabrication as it introduces the mobile Ag into the electrolyte and, therefore, has a significant effect on device characteristics. Data obtained from measurements on devices with different areas in both their high resistance state (HRS) and low resistance state (LRS) are used to parameterize equivalent circuit models. The models elucidate the differences in the HRS and LRS electrical properties.",

keywords = "Chalcogenide (ChG), electrochemical memory cell, electrochemical metallization memory (ECM), impedance spectra, nanoionic memory, photo doping, programmable metallization cells (PMCs), resistive switching random access memory (ReRAM), solid-state electrolyte",

author = "Debayan Mahalanabis and {Gonzalez Velo}, Yago and Hugh Barnaby and Michael Kozicki and Pradeep Dandamudi and Sarma Vrudhula",

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AU - Gonzalez Velo, Yago

AU - Barnaby, Hugh

AU - Kozicki, Michael

AU - Dandamudi, Pradeep

AU - Vrudhula, Sarma

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AB - Chalcogenide glass-based programmable metallization cell (PMC) devices undergo Ag+-ion transport and controlled resistance change under the application of electrical bias. In this paper, photo-doped PMC devices are characterized with impedance spectroscopy. Photo doping is an important step in PMC fabrication as it introduces the mobile Ag into the electrolyte and, therefore, has a significant effect on device characteristics. Data obtained from measurements on devices with different areas in both their high resistance state (HRS) and low resistance state (LRS) are used to parameterize equivalent circuit models. The models elucidate the differences in the HRS and LRS electrical properties.

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KW - impedance spectra

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KW - resistive switching random access memory (ReRAM)

KW - solid-state electrolyte

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