Abstract

Chalcogenide glass-based programmable metallization cell (PMC) devices undergo Ag+-ion transport and controlled resistance change under the application of electrical bias. In this paper, photo-doped PMC devices are characterized with impedance spectroscopy. Photo doping is an important step in PMC fabrication as it introduces the mobile Ag into the electrolyte and, therefore, has a significant effect on device characteristics. Data obtained from measurements on devices with different areas in both their high resistance state (HRS) and low resistance state (LRS) are used to parameterize equivalent circuit models. The models elucidate the differences in the HRS and LRS electrical properties.

Original languageEnglish (US)
Article number6912973
Pages (from-to)3723-3730
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume61
Issue number11
DOIs
StatePublished - Nov 1 2014

Fingerprint

Metallizing
Equivalent circuits
Electrolytes
Electric properties
Doping (additives)
Spectroscopy
Ions
Fabrication
Glass

Keywords

  • Chalcogenide (ChG)
  • electrochemical memory cell
  • electrochemical metallization memory (ECM)
  • impedance spectra
  • nanoionic memory
  • photo doping
  • programmable metallization cells (PMCs)
  • resistive switching random access memory (ReRAM)
  • solid-state electrolyte

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Impedance measurement and characterization of Ag-Ge30Se70-based programmable metallization cells. / Mahalanabis, Debayan; Gonzalez Velo, Yago; Barnaby, Hugh; Kozicki, Michael; Dandamudi, Pradeep; Vrudhula, Sarma.

In: IEEE Transactions on Electron Devices, Vol. 61, No. 11, 6912973, 01.11.2014, p. 3723-3730.

Research output: Contribution to journalArticle

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AU - Vrudhula, Sarma

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