Impact of vertical RRAM device characteristics on 3D cross-point array design

Pai Yu Chen, Shimeng Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations

Abstract

Resistive switching random access memory (RRAM) is one of the most promising candidates for the next-generation non-volatile memory. To enable large capacity RRAM array, the 3D architecture is needed. In this work, the analyses of different device characteristics, including the RRAM ON/OFF-state resistance (Ron/Roff), I-V nonlinearity ratio and the interconnect material, are performed to find the optimal design point of the 3D RRAM array. The results show that insufficient current drivability of the vertical transistor causes a significant amount of voltage drop on the transistor. The write and read margin conflicts with each other. A high R on is preferred over a high nonlinearity to improve the write/read margin. A RRAM cell with Ron=500kΩ and nonlinearity=5x can satisfy the specified programming and read sense criterion for a 128×128×16 array, Moreover, the energy consumption (<nJ/bit) of the write operation outperforms that in NAND FLASH. Finally, a feature size (F) of 30nm and 60nm with equal array densities are compared, which suggests that the downscaling of feature size might not be as crucial as believed and the design constraint can be relaxed as a result.

Original languageEnglish (US)
Title of host publication2014 IEEE 6th International Memory Workshop, IMW 2014
PublisherIEEE Computer Society
ISBN (Print)9781479935949
DOIs
StatePublished - Jan 1 2014
Event2014 IEEE 6th International Memory Workshop, IMW 2014 - Taipei, Taiwan, Province of China
Duration: May 18 2014May 21 2014

Publication series

Name2014 IEEE 6th International Memory Workshop, IMW 2014

Other

Other2014 IEEE 6th International Memory Workshop, IMW 2014
CountryTaiwan, Province of China
CityTaipei
Period5/18/145/21/14

Keywords

  • 3D vertical RRAM
  • Rom
  • cross-point array
  • energy consumption
  • feature size
  • interconnect
  • nonlinearity

ASJC Scopus subject areas

  • Software

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  • Cite this

    Chen, P. Y., & Yu, S. (2014). Impact of vertical RRAM device characteristics on 3D cross-point array design. In 2014 IEEE 6th International Memory Workshop, IMW 2014 [6849382] (2014 IEEE 6th International Memory Workshop, IMW 2014). IEEE Computer Society. https://doi.org/10.1109/IMW.2014.6849382