Impact of total ionizing dose on a 4th generation, 90 nm SiGe HBT Gaussian Pulse Generator

Farzad Inanlou, Nelson E. Lourenco, Zachary E. Fleetwood, Ickhyun Song, Duane C. Howard, Adilson Cardoso, Saeed Zeinolabedinzadeh, Enxia Zhang, Cher X. Zhang, Pauline Paki-Amouzou, John D. Cressler

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

We investigate the effects of total ionizing dose (TID) on a Gaussian pulse generator implemented in IBM's new 9HP SiGe BiCMOS platform, which combines 300 GHz {f-T} SiGe HBTs and 90 nm CMOS. Total dose effects were examined using a 10-keV X-ray source. The effects of TID on the performance of the pulse generator were investigated with the pulse generator exhibiting a {t-{pw}} variation of less than 7% for total dose of up to 3.0 Mrad. This circuit is intended for low-power autonomous high-altitude and space-based imaging radars.

Original languageEnglish (US)
Article number6940334
Pages (from-to)3050-3054
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume61
Issue number6
DOIs
StatePublished - Dec 1 2014
Externally publishedYes

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Keywords

  • Radar
  • SiGe BiCMOS
  • radiation effects
  • total ionizing dose (TID)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Inanlou, F., Lourenco, N. E., Fleetwood, Z. E., Song, I., Howard, D. C., Cardoso, A., Zeinolabedinzadeh, S., Zhang, E., Zhang, C. X., Paki-Amouzou, P., & Cressler, J. D. (2014). Impact of total ionizing dose on a 4th generation, 90 nm SiGe HBT Gaussian Pulse Generator. IEEE Transactions on Nuclear Science, 61(6), 3050-3054. [6940334]. https://doi.org/10.1109/TNS.2014.2363160