Impact of total ionizing dose on a 4th generation, 90 nm SiGe HBT Gaussian Pulse Generator

Farzad Inanlou; Nelson E. Lourenco; Zachary E. Fleetwood; Ickhyun Song; Duane C. Howard; Adilson Cardoso; Saeed Zeinolabedinzadeh; Enxia Zhang; Cher X. Zhang; Pauline Paki-Amouzou; John D. Cressler

doi:10.1109/TNS.2014.2363160

Impact of total ionizing dose on a 4th generation, 90 nm SiGe HBT Gaussian Pulse Generator

Farzad Inanlou, Nelson E. Lourenco, Zachary E. Fleetwood, Ickhyun Song, Duane C. Howard, Adilson Cardoso, Saeed Zeinolabedinzadeh, Enxia Zhang, Cher X. Zhang, Pauline Paki-Amouzou, John D. Cressler

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We investigate the effects of total ionizing dose (TID) on a Gaussian pulse generator implemented in IBM's new 9HP SiGe BiCMOS platform, which combines 300 GHz {f-T} SiGe HBTs and 90 nm CMOS. Total dose effects were examined using a 10-keV X-ray source. The effects of TID on the performance of the pulse generator were investigated with the pulse generator exhibiting a {t-{pw}} variation of less than 7% for total dose of up to 3.0 Mrad. This circuit is intended for low-power autonomous high-altitude and space-based imaging radars.

Original language	English (US)
Article number	6940334
Pages (from-to)	3050-3054
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	61
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2014.2363160
State	Published - Dec 1 2014
Externally published	Yes

Keywords

Radar
SiGe BiCMOS
radiation effects
total ionizing dose (TID)

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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Inanlou, F., Lourenco, N. E., Fleetwood, Z. E., Song, I., Howard, D. C., Cardoso, A., Zeinolabedinzadeh, S., Zhang, E., Zhang, C. X., Paki-Amouzou, P., & Cressler, J. D. (2014). Impact of total ionizing dose on a 4th generation, 90 nm SiGe HBT Gaussian Pulse Generator. IEEE Transactions on Nuclear Science, 61(6), 3050-3054. Article 6940334. https://doi.org/10.1109/TNS.2014.2363160

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abstract = "We investigate the effects of total ionizing dose (TID) on a Gaussian pulse generator implemented in IBM's new 9HP SiGe BiCMOS platform, which combines 300 GHz {f-T} SiGe HBTs and 90 nm CMOS. Total dose effects were examined using a 10-keV X-ray source. The effects of TID on the performance of the pulse generator were investigated with the pulse generator exhibiting a {t-{pw}} variation of less than 7% for total dose of up to 3.0 Mrad. This circuit is intended for low-power autonomous high-altitude and space-based imaging radars.",

keywords = "Radar, SiGe BiCMOS, radiation effects, total ionizing dose (TID)",

author = "Farzad Inanlou and Lourenco, {Nelson E.} and Fleetwood, {Zachary E.} and Ickhyun Song and Howard, {Duane C.} and Adilson Cardoso and Saeed Zeinolabedinzadeh and Enxia Zhang and Zhang, {Cher X.} and Pauline Paki-Amouzou and Cressler, {John D.}",

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doi = "10.1109/TNS.2014.2363160",

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AU - Inanlou, Farzad

AU - Lourenco, Nelson E.

AU - Fleetwood, Zachary E.

AU - Song, Ickhyun

AU - Howard, Duane C.

AU - Cardoso, Adilson

AU - Zeinolabedinzadeh, Saeed

AU - Zhang, Enxia

AU - Zhang, Cher X.

AU - Paki-Amouzou, Pauline

AU - Cressler, John D.

PY - 2014/12/1

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AB - We investigate the effects of total ionizing dose (TID) on a Gaussian pulse generator implemented in IBM's new 9HP SiGe BiCMOS platform, which combines 300 GHz {f-T} SiGe HBTs and 90 nm CMOS. Total dose effects were examined using a 10-keV X-ray source. The effects of TID on the performance of the pulse generator were investigated with the pulse generator exhibiting a {t-{pw}} variation of less than 7% for total dose of up to 3.0 Mrad. This circuit is intended for low-power autonomous high-altitude and space-based imaging radars.

KW - Radar

KW - SiGe BiCMOS

KW - radiation effects

KW - total ionizing dose (TID)

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Impact of total ionizing dose on a 4th generation, 90 nm SiGe HBT Gaussian Pulse Generator

Abstract

Keywords

ASJC Scopus subject areas

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