Abstract
This paper investigates the impact of tabula rasa (TR) and phosphorus diffusion gettering (PDG), both in isolation and in combination, for improving the electronic quality of n-type Czochralski grown Upgraded Metallurgical-Grade (UMG) silicon wafers. We have found that the bulk lifetimes of the UMG wafers were affected by both oxygen precipitate nuclei and mobile metallic impurities. Thus, we achieved the best bulk lifetimes after subjecting the UMG wafers to a TR step prior to a PDG step. Further, we report silicon heterojunction solar cells results based on the UMG wafers subjected to a TR step prior to a PDG step. The best in-house measured efficiencies were 21.2 % and 20.8 % for the UMG wafers from the middle and tail regions of the ingot, respectively.
Original language | English (US) |
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Title of host publication | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 1687-1691 |
Number of pages | 5 |
ISBN (Electronic) | 9781538685297 |
DOIs | |
State | Published - Nov 26 2018 |
Event | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: Jun 10 2018 → Jun 15 2018 |
Other
Other | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 |
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Country | United States |
City | Waikoloa Village |
Period | 6/10/18 → 6/15/18 |
Keywords
- Czochralski
- phosphorus diffusion gettering
- silicon heterojunction solar cell
- tabula rasa and upgraded metallurgical-grade silicon
ASJC Scopus subject areas
- Energy Engineering and Power Technology
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials