TY - GEN
T1 - Impact of Tabula Rasa and Phosphorus Diffusion Gettering on 21% Heterojunction Solar Cells Based on n-Type Czochralski-Grown Upgrade Metallurgical-Grade Silicon
AU - Basnet, Rabin
AU - Weigand, William
AU - Yu, Zhengshan
AU - Sun, Chang
AU - Phang, Sieu P.
AU - Rougieux, Fiacre E.
AU - Einhaus, Roland
AU - Degoulange, Julien
AU - Holman, Zachary
AU - Macdonald, Daniel
N1 - Funding Information:
This work has been supported by the Australian Renewable Energy Agency (ARENA) through the Australian Centre for Advanced Photovoltaics (ACAP), and project RND009. Support was also provided by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895.
Publisher Copyright:
© 2018 IEEE.
PY - 2018/11/26
Y1 - 2018/11/26
N2 - This paper investigates the impact of tabula rasa (TR) and phosphorus diffusion gettering (PDG), both in isolation and in combination, for improving the electronic quality of n-type Czochralski grown Upgraded Metallurgical-Grade (UMG) silicon wafers. We have found that the bulk lifetimes of the UMG wafers were affected by both oxygen precipitate nuclei and mobile metallic impurities. Thus, we achieved the best bulk lifetimes after subjecting the UMG wafers to a TR step prior to a PDG step. Further, we report silicon heterojunction solar cells results based on the UMG wafers subjected to a TR step prior to a PDG step. The best in-house measured efficiencies were 21.2 % and 20.8 % for the UMG wafers from the middle and tail regions of the ingot, respectively.
AB - This paper investigates the impact of tabula rasa (TR) and phosphorus diffusion gettering (PDG), both in isolation and in combination, for improving the electronic quality of n-type Czochralski grown Upgraded Metallurgical-Grade (UMG) silicon wafers. We have found that the bulk lifetimes of the UMG wafers were affected by both oxygen precipitate nuclei and mobile metallic impurities. Thus, we achieved the best bulk lifetimes after subjecting the UMG wafers to a TR step prior to a PDG step. Further, we report silicon heterojunction solar cells results based on the UMG wafers subjected to a TR step prior to a PDG step. The best in-house measured efficiencies were 21.2 % and 20.8 % for the UMG wafers from the middle and tail regions of the ingot, respectively.
KW - Czochralski
KW - phosphorus diffusion gettering
KW - silicon heterojunction solar cell
KW - tabula rasa and upgraded metallurgical-grade silicon
UR - http://www.scopus.com/inward/record.url?scp=85059915853&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85059915853&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2018.8548218
DO - 10.1109/PVSC.2018.8548218
M3 - Conference contribution
AN - SCOPUS:85059915853
T3 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
SP - 1687
EP - 1691
BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Y2 - 10 June 2018 through 15 June 2018
ER -