Abstract

Molecular beam epitaxial growth of strain-balanced InAs/InAs 1-xSbx type-II superlattices on GaSb substrates has been investigated for substrate temperatures from 400 °C to 450 °C. The Sb composition is found to vary linearly with substrate temperature at constant V/III ratios. For samples grown at the optimized substrate temperature (410 °C), superlattice zero-order peak full-width at half-maximums are routinely less than 25 arc sec using high-resolution X-ray diffraction. Cross-sectional transmission electron microscopy images show the absence of any visible defects. Strong photoluminescence covers a wavelength range from 5.5 to 13 μm at 12 K. Photoluminescence linewidth simulations show satisfactory agreement with experiments.

Original languageEnglish (US)
Article number071903
JournalApplied Physics Letters
Volume102
Issue number7
DOIs
StatePublished - Feb 18 2013

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superlattices
molecular beam epitaxy
optical properties
photoluminescence
temperature
molecular beams
arcs
transmission electron microscopy
high resolution
defects
diffraction
wavelengths
x rays
simulation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy. / Liu, Shi; Li, Hua; Cellek, Oray O.; Ding, Ding; Shen, Xiao Meng; Lin, Zhi Yuan; Steenbergen, Elizabeth H.; Fan, Jin; He, Zhao Yu; Lu, Jing; Johnson, Shane; Smith, David; Zhang, Yong-Hang.

In: Applied Physics Letters, Vol. 102, No. 7, 071903, 18.02.2013.

Research output: Contribution to journalArticle

Liu, Shi ; Li, Hua ; Cellek, Oray O. ; Ding, Ding ; Shen, Xiao Meng ; Lin, Zhi Yuan ; Steenbergen, Elizabeth H. ; Fan, Jin ; He, Zhao Yu ; Lu, Jing ; Johnson, Shane ; Smith, David ; Zhang, Yong-Hang. / Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy. In: Applied Physics Letters. 2013 ; Vol. 102, No. 7.
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abstract = "Molecular beam epitaxial growth of strain-balanced InAs/InAs 1-xSbx type-II superlattices on GaSb substrates has been investigated for substrate temperatures from 400 °C to 450 °C. The Sb composition is found to vary linearly with substrate temperature at constant V/III ratios. For samples grown at the optimized substrate temperature (410 °C), superlattice zero-order peak full-width at half-maximums are routinely less than 25 arc sec using high-resolution X-ray diffraction. Cross-sectional transmission electron microscopy images show the absence of any visible defects. Strong photoluminescence covers a wavelength range from 5.5 to 13 μm at 12 K. Photoluminescence linewidth simulations show satisfactory agreement with experiments.",
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AU - Ding, Ding

AU - Shen, Xiao Meng

AU - Lin, Zhi Yuan

AU - Steenbergen, Elizabeth H.

AU - Fan, Jin

AU - He, Zhao Yu

AU - Lu, Jing

AU - Johnson, Shane

AU - Smith, David

AU - Zhang, Yong-Hang

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AB - Molecular beam epitaxial growth of strain-balanced InAs/InAs 1-xSbx type-II superlattices on GaSb substrates has been investigated for substrate temperatures from 400 °C to 450 °C. The Sb composition is found to vary linearly with substrate temperature at constant V/III ratios. For samples grown at the optimized substrate temperature (410 °C), superlattice zero-order peak full-width at half-maximums are routinely less than 25 arc sec using high-resolution X-ray diffraction. Cross-sectional transmission electron microscopy images show the absence of any visible defects. Strong photoluminescence covers a wavelength range from 5.5 to 13 μm at 12 K. Photoluminescence linewidth simulations show satisfactory agreement with experiments.

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