Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

Shi Liu; Hua Li; Oray O. Cellek; Ding Ding; Xiao Meng Shen; Zhi Yuan Lin; Elizabeth H. Steenbergen; Jin Fan; Zhao Yu He; Jing Lu; Shane Johnson; David Smith; Yong-Hang Zhang

doi:10.1063/1.4793231

Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

Shi Liu, Hua Li, Oray O. Cellek, Ding Ding, Xiao Meng Shen, Zhi Yuan Lin, Elizabeth H. Steenbergen, Jin Fan, Zhao Yu He, Jing Lu, Shane Johnson, David Smith, Yong-Hang Zhang

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Abstract

Molecular beam epitaxial growth of strain-balanced InAs/InAs _1-xSb_x type-II superlattices on GaSb substrates has been investigated for substrate temperatures from 400 °C to 450 °C. The Sb composition is found to vary linearly with substrate temperature at constant V/III ratios. For samples grown at the optimized substrate temperature (410 °C), superlattice zero-order peak full-width at half-maximums are routinely less than 25 arc sec using high-resolution X-ray diffraction. Cross-sectional transmission electron microscopy images show the absence of any visible defects. Strong photoluminescence covers a wavelength range from 5.5 to 13 μm at 12 K. Photoluminescence linewidth simulations show satisfactory agreement with experiments.

Original language	English (US)
Article number	071903
Journal	Applied Physics Letters
Volume	102
Issue number	7
DOIs	https://doi.org/10.1063/1.4793231
State	Published - Feb 18 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4793231

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Liu, S., Li, H., Cellek, O. O., Ding, D., Shen, X. M., Lin, Z. Y., Steenbergen, E. H., Fan, J., He, Z. Y., Lu, J., Johnson, S., Smith, D., & Zhang, Y.-H. (2013). Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy. Applied Physics Letters, 102(7), Article 071903. https://doi.org/10.1063/1.4793231

Liu, S, Li, H, Cellek, OO, Ding, D, Shen, XM, Lin, ZY, Steenbergen, EH, Fan, J, He, ZY, Lu, J, Johnson, S , Smith, D & Zhang, Y-H 2013, 'Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy', Applied Physics Letters, vol. 102, no. 7, 071903. https://doi.org/10.1063/1.4793231

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title = "Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy",

abstract = "Molecular beam epitaxial growth of strain-balanced InAs/InAs 1-xSbx type-II superlattices on GaSb substrates has been investigated for substrate temperatures from 400 °C to 450 °C. The Sb composition is found to vary linearly with substrate temperature at constant V/III ratios. For samples grown at the optimized substrate temperature (410 °C), superlattice zero-order peak full-width at half-maximums are routinely less than 25 arc sec using high-resolution X-ray diffraction. Cross-sectional transmission electron microscopy images show the absence of any visible defects. Strong photoluminescence covers a wavelength range from 5.5 to 13 μm at 12 K. Photoluminescence linewidth simulations show satisfactory agreement with experiments.",

author = "Shi Liu and Hua Li and Cellek, {Oray O.} and Ding Ding and Shen, {Xiao Meng} and Lin, {Zhi Yuan} and Steenbergen, {Elizabeth H.} and Jin Fan and He, {Zhao Yu} and Jing Lu and Shane Johnson and David Smith and Yong-Hang Zhang",

note = "Funding Information: The authors are grateful for the support of ARO MURI program W911NF-10-1-0524 (administered by U.S. Army Research Office and monitored by William W. Clark) and an AFOSR Grant (FA9550-10-1-0129 monitored by Dr. Kitt Reinhardt), and they gratefully acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy and LeRoy Eyring Center for Solid State Science at Arizona State University.",

year = "2013",

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doi = "10.1063/1.4793231",

language = "English (US)",

volume = "102",

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T1 - Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

AU - Liu, Shi

AU - Li, Hua

AU - Cellek, Oray O.

AU - Ding, Ding

AU - Shen, Xiao Meng

AU - Lin, Zhi Yuan

AU - Steenbergen, Elizabeth H.

AU - Fan, Jin

AU - He, Zhao Yu

AU - Lu, Jing

AU - Johnson, Shane

AU - Smith, David

AU - Zhang, Yong-Hang

N1 - Funding Information: The authors are grateful for the support of ARO MURI program W911NF-10-1-0524 (administered by U.S. Army Research Office and monitored by William W. Clark) and an AFOSR Grant (FA9550-10-1-0129 monitored by Dr. Kitt Reinhardt), and they gratefully acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy and LeRoy Eyring Center for Solid State Science at Arizona State University.

PY - 2013/2/18

Y1 - 2013/2/18

N2 - Molecular beam epitaxial growth of strain-balanced InAs/InAs 1-xSbx type-II superlattices on GaSb substrates has been investigated for substrate temperatures from 400 °C to 450 °C. The Sb composition is found to vary linearly with substrate temperature at constant V/III ratios. For samples grown at the optimized substrate temperature (410 °C), superlattice zero-order peak full-width at half-maximums are routinely less than 25 arc sec using high-resolution X-ray diffraction. Cross-sectional transmission electron microscopy images show the absence of any visible defects. Strong photoluminescence covers a wavelength range from 5.5 to 13 μm at 12 K. Photoluminescence linewidth simulations show satisfactory agreement with experiments.

AB - Molecular beam epitaxial growth of strain-balanced InAs/InAs 1-xSbx type-II superlattices on GaSb substrates has been investigated for substrate temperatures from 400 °C to 450 °C. The Sb composition is found to vary linearly with substrate temperature at constant V/III ratios. For samples grown at the optimized substrate temperature (410 °C), superlattice zero-order peak full-width at half-maximums are routinely less than 25 arc sec using high-resolution X-ray diffraction. Cross-sectional transmission electron microscopy images show the absence of any visible defects. Strong photoluminescence covers a wavelength range from 5.5 to 13 μm at 12 K. Photoluminescence linewidth simulations show satisfactory agreement with experiments.

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Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

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