Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

Shi Liu, Hua Li, Oray O. Cellek, Ding Ding, Xiao Meng Shen, Zhi Yuan Lin, Elizabeth H. Steenbergen, Jin Fan, Zhao Yu He, Jing Lu, Shane Johnson, David Smith, Yong-Hang Zhang

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10 Scopus citations

Abstract

Molecular beam epitaxial growth of strain-balanced InAs/InAs 1-xSbx type-II superlattices on GaSb substrates has been investigated for substrate temperatures from 400 °C to 450 °C. The Sb composition is found to vary linearly with substrate temperature at constant V/III ratios. For samples grown at the optimized substrate temperature (410 °C), superlattice zero-order peak full-width at half-maximums are routinely less than 25 arc sec using high-resolution X-ray diffraction. Cross-sectional transmission electron microscopy images show the absence of any visible defects. Strong photoluminescence covers a wavelength range from 5.5 to 13 μm at 12 K. Photoluminescence linewidth simulations show satisfactory agreement with experiments.

Original languageEnglish (US)
Article number071903
JournalApplied Physics Letters
Volume102
Issue number7
DOIs
StatePublished - Feb 18 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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