Impact of strong quantum confinement on the performance of a highly asymmetric device structure

Monte Carlo particle-based simulation of a focused-ion-beam MOSFET

Irena Knezevic, Dragica Vasileska, David K. Ferry

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

A highly asymmetric 250 nm n-channel MOSFET, with a 70-nm p + -implant placed at the source end of the channel (achievable by focused-ion-beam (FIB) implantation, so the device is named FIBMOS), has been simulated using a two-dimensional (2-D) coupled Monte Carlo-Poisson solver, in which quantum confinement effects have been taken into account by incorporating an effective potential scheme into the particle simulator. Although the device is a long-channel one, its performance is dictated by the highly doped p+-implant at the source end of the channel, and it is crucial to properly account for the quantum-confinement effects in transport, especially at the implant/oxide interface. We show that parameters such as threshold voltage and device transconductance are extremely sensitive to the proper treatment of quantization effects. On the other hand, the built-in electric field, due to the pronounced asymmetry caused by the presence of the p +-implant, drastically influences the carrier transport, and consequently, the device output characteristics, in particular the magnitude of the velocity overshoot effect and the low-field electron mobility.

Original languageEnglish (US)
Pages (from-to)1019-1026
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume49
Issue number6
DOIs
StatePublished - Jun 2002

Fingerprint

Quantum confinement
Focused ion beams
field effect transistors
ion beams
Carrier transport
Electron mobility
Transconductance
Threshold voltage
Oxides
simulation
Simulators
Electric fields
transconductance
electron mobility
threshold voltage
simulators
implantation
asymmetry
oxides
electric fields

Keywords

  • Asymmetric device structures
  • FIBMOS device
  • Monte Carlo simulation
  • Quantization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "A highly asymmetric 250 nm n-channel MOSFET, with a 70-nm p + -implant placed at the source end of the channel (achievable by focused-ion-beam (FIB) implantation, so the device is named FIBMOS), has been simulated using a two-dimensional (2-D) coupled Monte Carlo-Poisson solver, in which quantum confinement effects have been taken into account by incorporating an effective potential scheme into the particle simulator. Although the device is a long-channel one, its performance is dictated by the highly doped p+-implant at the source end of the channel, and it is crucial to properly account for the quantum-confinement effects in transport, especially at the implant/oxide interface. We show that parameters such as threshold voltage and device transconductance are extremely sensitive to the proper treatment of quantization effects. On the other hand, the built-in electric field, due to the pronounced asymmetry caused by the presence of the p +-implant, drastically influences the carrier transport, and consequently, the device output characteristics, in particular the magnitude of the velocity overshoot effect and the low-field electron mobility.",
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