Impact of strong quantum confinement on the performance of a highly asymmetric device structure: Monte Carlo particle-based simulation of a focused-ion-beam MOSFET

Irena Knezevic, Dragica Vasileska, David K. Ferry

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

A highly asymmetric 250 nm n-channel MOSFET, with a 70-nm p + -implant placed at the source end of the channel (achievable by focused-ion-beam (FIB) implantation, so the device is named FIBMOS), has been simulated using a two-dimensional (2-D) coupled Monte Carlo-Poisson solver, in which quantum confinement effects have been taken into account by incorporating an effective potential scheme into the particle simulator. Although the device is a long-channel one, its performance is dictated by the highly doped p+-implant at the source end of the channel, and it is crucial to properly account for the quantum-confinement effects in transport, especially at the implant/oxide interface. We show that parameters such as threshold voltage and device transconductance are extremely sensitive to the proper treatment of quantization effects. On the other hand, the built-in electric field, due to the pronounced asymmetry caused by the presence of the p +-implant, drastically influences the carrier transport, and consequently, the device output characteristics, in particular the magnitude of the velocity overshoot effect and the low-field electron mobility.

Original languageEnglish (US)
Pages (from-to)1019-1026
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume49
Issue number6
DOIs
StatePublished - Jun 1 2002

Keywords

  • Asymmetric device structures
  • FIBMOS device
  • Monte Carlo simulation
  • Quantization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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