Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation

Shimeng Yu, Yuning Zhao, Gang Du, Jinfeng Kang, Ruqi Han, Xiaoyan Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

3-D mixed-mode device-circuit simulation is presented to investigate stochastic mismatch of FinFETs SRAM cell induced by process variation including fin-thickness and gate length variation as well as fin line edge roughness (LER). In this work, 20nm FinFETs SRAM's sensitivity of read and write static noise margin (SNM) to process variation is evaluated. The worst cases of read and write SNM under the influence of process variation are summarized. The results show that FinFETs SRAM's stability is most sensitive to the access transistor's fin-thickness variation. Under the worst cases, increasing the pull-down transistor's fin-number may improve read SNM. The fin LER can cause aggressive fluctuations of the butterfly-curves and impose a big challenge on robust FinFETs SRAM design. Adopting 8T cell instead of 6T cell can alleviate the fin LER effect on read stability.

Original languageEnglish (US)
Title of host publication2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs
StatePublished - Dec 1 2008
Event2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China
Duration: Dec 8 2008Dec 10 2008

Publication series

Name2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryChina
CityHong Kong
Period12/8/0812/10/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Yu, S., Zhao, Y., Du, G., Kang, J., Han, R., & Liu, X. (2008). Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation. In 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC [4760701] (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC). https://doi.org/10.1109/EDSSC.2008.4760701