Impact of single event gate rupture and latent defects on power MOSFETs switching operation

A. Privat, A. D. Touboul, M. Petit, J. J. Huselstein, F. Wrobel, F. Forest, J. R. Vaillé, S. Bourdarie, R. Arinero, N. Chatry, G. Chaumont, E. Lorfèvre, F. Saigné

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