Impact of single event gate rupture and latent defects on power MOSFETs switching operation

A. Privat, A. D. Touboul, M. Petit, J. J. Huselstein, F. Wrobel, F. Forest, J. R. Vaillé, S. Bourdarie, R. Arinero, N. Chatry, G. Chaumont, E. Lorfèvre, F. Saigné

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

This paper reports on the impact of single event gate rupture and post-irradiation gate stress on Power MOSFETs switching ability. A dedicated setup has been developed and presented in this paper. The data showed that devices can switch after Single Event Gate Rupture. Failure of energy conversion system does not depend on IG gate current of the device but its associated external circuitry. Moreover, the data showed that devices having a gate layout constituted of parallel stripes are less sensitive than hexagonal shape when electrical constraints are applied after failure. It was also observed that the sensitivity of SEGR can be enhanced by X-ray irradiation but enhanced degradation is not observed during the switching operation.

Original languageEnglish (US)
Article number6869060
Pages (from-to)1856-1864
Number of pages9
JournalIEEE Transactions on Nuclear Science
Volume61
Issue number4
DOIs
StatePublished - Aug 2014
Externally publishedYes

Keywords

  • Heavy ion
  • latent defects
  • power MOSFET
  • SEGR
  • switching
  • X-ray irradiation

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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