Impact of single event gate rupture and latent defects on power MOSFETs switching operation

A. Privat; A. D. Touboul; M. Petit; J. J. Huselstein; F. Wrobel; F. Forest; J. R. Vaillé; S. Bourdarie; R. Arinero; N. Chatry; G. Chaumont; E. Lorfèvre; F. Saigné

doi:10.1109/TNS.2014.2333542

Impact of single event gate rupture and latent defects on power MOSFETs switching operation

A. Privat, A. D. Touboul, M. Petit, J. J. Huselstein, F. Wrobel, F. Forest, J. R. Vaillé, S. Bourdarie, R. Arinero, N. Chatry, G. Chaumont, E. Lorfèvre, F. Saigné

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This paper reports on the impact of single event gate rupture and post-irradiation gate stress on Power MOSFETs switching ability. A dedicated setup has been developed and presented in this paper. The data showed that devices can switch after Single Event Gate Rupture. Failure of energy conversion system does not depend on I_G gate current of the device but its associated external circuitry. Moreover, the data showed that devices having a gate layout constituted of parallel stripes are less sensitive than hexagonal shape when electrical constraints are applied after failure. It was also observed that the sensitivity of SEGR can be enhanced by X-ray irradiation but enhanced degradation is not observed during the switching operation.

Original language	English (US)
Article number	6869060
Pages (from-to)	1856-1864
Number of pages	9
Journal	IEEE Transactions on Nuclear Science
Volume	61
Issue number	4
DOIs	https://doi.org/10.1109/TNS.2014.2333542
State	Published - Aug 2014
Externally published	Yes

Keywords

Heavy ion
SEGR
X-ray irradiation
latent defects
power MOSFET
switching

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2014.2333542

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Privat, A., Touboul, A. D., Petit, M., Huselstein, J. J., Wrobel, F., Forest, F., Vaillé, J. R., Bourdarie, S., Arinero, R., Chatry, N., Chaumont, G., Lorfèvre, E., & Saigné, F. (2014). Impact of single event gate rupture and latent defects on power MOSFETs switching operation. IEEE Transactions on Nuclear Science, 61(4), 1856-1864. Article 6869060. https://doi.org/10.1109/TNS.2014.2333542

Privat, A, Touboul, AD, Petit, M, Huselstein, JJ, Wrobel, F, Forest, F, Vaillé, JR, Bourdarie, S, Arinero, R, Chatry, N, Chaumont, G, Lorfèvre, E & Saigné, F 2014, 'Impact of single event gate rupture and latent defects on power MOSFETs switching operation', IEEE Transactions on Nuclear Science, vol. 61, no. 4, 6869060, pp. 1856-1864. https://doi.org/10.1109/TNS.2014.2333542

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title = "Impact of single event gate rupture and latent defects on power MOSFETs switching operation",

abstract = "This paper reports on the impact of single event gate rupture and post-irradiation gate stress on Power MOSFETs switching ability. A dedicated setup has been developed and presented in this paper. The data showed that devices can switch after Single Event Gate Rupture. Failure of energy conversion system does not depend on IG gate current of the device but its associated external circuitry. Moreover, the data showed that devices having a gate layout constituted of parallel stripes are less sensitive than hexagonal shape when electrical constraints are applied after failure. It was also observed that the sensitivity of SEGR can be enhanced by X-ray irradiation but enhanced degradation is not observed during the switching operation.",

keywords = "Heavy ion, SEGR, X-ray irradiation, latent defects, power MOSFET, switching",

author = "A. Privat and Touboul, {A. D.} and M. Petit and Huselstein, {J. J.} and F. Wrobel and F. Forest and Vaill{\'e}, {J. R.} and S. Bourdarie and R. Arinero and N. Chatry and G. Chaumont and E. Lorf{\`e}vre and F. Saign{\'e}",

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AU - Touboul, A. D.

AU - Petit, M.

AU - Huselstein, J. J.

AU - Wrobel, F.

AU - Forest, F.

AU - Vaillé, J. R.

AU - Bourdarie, S.

AU - Arinero, R.

AU - Chatry, N.

AU - Chaumont, G.

AU - Lorfèvre, E.

AU - Saigné, F.

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Impact of single event gate rupture and latent defects on power MOSFETs switching operation

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Keywords

ASJC Scopus subject areas

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