Impact of pulse rise time on programming of cross-point RRAM arrays

Rui Liu, Hong Yu Chen, Haitong Li, Peng Huang, Liang Zhao, Zhe Chen, Feifei Zhang, Bing Chen, Lifeng Liu, Xiaoyan Liu, Bin Gao, Shimeng Yu, Yoshio Nishi, H. S Philip Wong, Jinfeng Kang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The role of pulse rise time during RRAM programming of cross-point arrays is investigated. The parasitic components in memory arrays is shown to result in distortion and degradation of the applied pulse on the memory cells (compared to the ideal/as-generated pulse), and will potentially cause programming failure. For the first time, the impact of pulse rising edge on the switching voltage is measured. The degradation and distortion of the applied pulse will result in programming failure when the pulse width becomes narrow. Thus, extra attention must be paid for large scale cross-point architecture in high-speed applications.

Original languageEnglish (US)
Title of host publicationProceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
PublisherIEEE Computer Society
ISBN (Print)9781479922178
DOIs
StatePublished - Jan 1 2014
Event2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, Taiwan, Province of China
Duration: Apr 28 2014Apr 30 2014

Publication series

NameProceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

Other

Other2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
CountryTaiwan, Province of China
CityHsinchu
Period4/28/144/30/14

ASJC Scopus subject areas

  • Hardware and Architecture
  • Computer Science Applications

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