Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes

Matthew T. Hardy, Feng Wu, Chia Yen Huang, Yuji Zhao, Daniel F. Feezell, Shuji Nakamura, James S. Speck, Steven P. DenBaars

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

Dark triangle defects (DTDs) are common nonradiative defects in semipolar (2021) oriented green quantum wells (QWs), commonly used in green laser diodes (LDs). We show that DTDs do not appear "as-grown, " and DTD size depends strongly on post-QW-growth annealing time and temperature. Using low temperature p-GaN, we prevent catastrophic QW damage and directly compare LDs with GaN and AlGaN containing barriers. The GaN barrier LD exhibited a lasing wavelength of 511 nm, reduced operating voltage, and the lowest threshold current density, likely due to enhanced optical confinement factor and the elimination of very low growth temperature AlGaN in the active region.

Original languageEnglish (US)
Article number6655964
Pages (from-to)43-46
Number of pages4
JournalIEEE Photonics Technology Letters
Volume26
Issue number1
DOIs
StatePublished - Jan 1 2014
Externally publishedYes

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Keywords

  • Epitaxial defects
  • Green laser diodes
  • Quantum well lasers
  • Semipolar GaN
  • Thermal stability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Hardy, M. T., Wu, F., Huang, C. Y., Zhao, Y., Feezell, D. F., Nakamura, S., Speck, J. S., & DenBaars, S. P. (2014). Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes. IEEE Photonics Technology Letters, 26(1), 43-46. [6655964]. https://doi.org/10.1109/LPT.2013.2288927