Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes

Matthew T. Hardy, Feng Wu, Chia Yen Huang, Yuji Zhao, Daniel F. Feezell, Shuji Nakamura, James S. Speck, Steven P. DenBaars

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Dark triangle defects (DTDs) are common nonradiative defects in semipolar (2021) oriented green quantum wells (QWs), commonly used in green laser diodes (LDs). We show that DTDs do not appear "as-grown, " and DTD size depends strongly on post-QW-growth annealing time and temperature. Using low temperature p-GaN, we prevent catastrophic QW damage and directly compare LDs with GaN and AlGaN containing barriers. The GaN barrier LD exhibited a lasing wavelength of 511 nm, reduced operating voltage, and the lowest threshold current density, likely due to enhanced optical confinement factor and the elimination of very low growth temperature AlGaN in the active region.

Original languageEnglish (US)
Article number6655964
Pages (from-to)43-46
Number of pages4
JournalIEEE Photonics Technology Letters
Volume26
Issue number1
DOIs
StatePublished - Jan 1 2014
Externally publishedYes

Fingerprint

Semiconductor lasers
semiconductor lasers
triangles
Semiconductor quantum wells
damage
Defects
defects
quantum wells
Chemical analysis
Threshold current density
Growth temperature
threshold currents
lasing
elimination
Annealing
current density
Wavelength
Temperature
annealing
temperature

Keywords

  • Epitaxial defects
  • Green laser diodes
  • Quantum well lasers
  • Semipolar GaN
  • Thermal stability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

Hardy, M. T., Wu, F., Huang, C. Y., Zhao, Y., Feezell, D. F., Nakamura, S., ... DenBaars, S. P. (2014). Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes. IEEE Photonics Technology Letters, 26(1), 43-46. [6655964]. https://doi.org/10.1109/LPT.2013.2288927

Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes. / Hardy, Matthew T.; Wu, Feng; Huang, Chia Yen; Zhao, Yuji; Feezell, Daniel F.; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

In: IEEE Photonics Technology Letters, Vol. 26, No. 1, 6655964, 01.01.2014, p. 43-46.

Research output: Contribution to journalArticle

Hardy, MT, Wu, F, Huang, CY, Zhao, Y, Feezell, DF, Nakamura, S, Speck, JS & DenBaars, SP 2014, 'Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes', IEEE Photonics Technology Letters, vol. 26, no. 1, 6655964, pp. 43-46. https://doi.org/10.1109/LPT.2013.2288927
Hardy, Matthew T. ; Wu, Feng ; Huang, Chia Yen ; Zhao, Yuji ; Feezell, Daniel F. ; Nakamura, Shuji ; Speck, James S. ; DenBaars, Steven P. / Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes. In: IEEE Photonics Technology Letters. 2014 ; Vol. 26, No. 1. pp. 43-46.
@article{8448d9151b8b440eba086ffbb18b6c75,
title = "Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes",
abstract = "Dark triangle defects (DTDs) are common nonradiative defects in semipolar (2021) oriented green quantum wells (QWs), commonly used in green laser diodes (LDs). We show that DTDs do not appear {"}as-grown, {"} and DTD size depends strongly on post-QW-growth annealing time and temperature. Using low temperature p-GaN, we prevent catastrophic QW damage and directly compare LDs with GaN and AlGaN containing barriers. The GaN barrier LD exhibited a lasing wavelength of 511 nm, reduced operating voltage, and the lowest threshold current density, likely due to enhanced optical confinement factor and the elimination of very low growth temperature AlGaN in the active region.",
keywords = "Epitaxial defects, Green laser diodes, Quantum well lasers, Semipolar GaN, Thermal stability",
author = "Hardy, {Matthew T.} and Feng Wu and Huang, {Chia Yen} and Yuji Zhao and Feezell, {Daniel F.} and Shuji Nakamura and Speck, {James S.} and DenBaars, {Steven P.}",
year = "2014",
month = "1",
day = "1",
doi = "10.1109/LPT.2013.2288927",
language = "English (US)",
volume = "26",
pages = "43--46",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

TY - JOUR

T1 - Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes

AU - Hardy, Matthew T.

AU - Wu, Feng

AU - Huang, Chia Yen

AU - Zhao, Yuji

AU - Feezell, Daniel F.

AU - Nakamura, Shuji

AU - Speck, James S.

AU - DenBaars, Steven P.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Dark triangle defects (DTDs) are common nonradiative defects in semipolar (2021) oriented green quantum wells (QWs), commonly used in green laser diodes (LDs). We show that DTDs do not appear "as-grown, " and DTD size depends strongly on post-QW-growth annealing time and temperature. Using low temperature p-GaN, we prevent catastrophic QW damage and directly compare LDs with GaN and AlGaN containing barriers. The GaN barrier LD exhibited a lasing wavelength of 511 nm, reduced operating voltage, and the lowest threshold current density, likely due to enhanced optical confinement factor and the elimination of very low growth temperature AlGaN in the active region.

AB - Dark triangle defects (DTDs) are common nonradiative defects in semipolar (2021) oriented green quantum wells (QWs), commonly used in green laser diodes (LDs). We show that DTDs do not appear "as-grown, " and DTD size depends strongly on post-QW-growth annealing time and temperature. Using low temperature p-GaN, we prevent catastrophic QW damage and directly compare LDs with GaN and AlGaN containing barriers. The GaN barrier LD exhibited a lasing wavelength of 511 nm, reduced operating voltage, and the lowest threshold current density, likely due to enhanced optical confinement factor and the elimination of very low growth temperature AlGaN in the active region.

KW - Epitaxial defects

KW - Green laser diodes

KW - Quantum well lasers

KW - Semipolar GaN

KW - Thermal stability

UR - http://www.scopus.com/inward/record.url?scp=84890941166&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84890941166&partnerID=8YFLogxK

U2 - 10.1109/LPT.2013.2288927

DO - 10.1109/LPT.2013.2288927

M3 - Article

VL - 26

SP - 43

EP - 46

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 1

M1 - 6655964

ER -