Abstract
The synergistic effect between displacement damage dose (DDD) and analog transient radiation effects on electronics (ATREE) in an operational amplifier (LM124) (opamp) from three different manufacturers is investigated. Pulsed X-ray experiments have highlighted ATREE sensitivity on devices significantly more important following exposure to fission neutrons than for unirradiated devices. A previously developed simulation tool is used to model ATREE responses taking into account the electrical parameters degradation due to displacement damage phenomenon. A good agreement is observed between model outputs and experimental ATREE results.
Original language | English (US) |
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Article number | 6949159 |
Pages (from-to) | 3043-3049 |
Number of pages | 7 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 61 |
Issue number | 6 |
DOIs | |
State | Published - Dec 1 2014 |
Externally published | Yes |
Keywords
- Bipolar analog integrated circuits
- X-ray effects
- circuit modeling
- displacement damage
- total non-ionizing dose
- transient radiation effects
- transient response
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering