Impact of neutron-induced displacement damage on the ATREE Response in LM124 operational amplifier

Fabien Roig, L. Dusseau, P. Ribeiro, G. Auriel, N. J.H. Roche, A. Privat, J. R. Vaille, J. Boch, F. Saigne, R. Marec, P. Calvel, F. Bezerra, R. Ecoffet, B. Azais

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The synergistic effect between displacement damage dose (DDD) and analog transient radiation effects on electronics (ATREE) in an operational amplifier (LM124) (opamp) from three different manufacturers is investigated. Pulsed X-ray experiments have highlighted ATREE sensitivity on devices significantly more important following exposure to fission neutrons than for unirradiated devices. A previously developed simulation tool is used to model ATREE responses taking into account the electrical parameters degradation due to displacement damage phenomenon. A good agreement is observed between model outputs and experimental ATREE results.

Original languageEnglish (US)
Article number6949159
Pages (from-to)3043-3049
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume61
Issue number6
DOIs
StatePublished - Dec 1 2014
Externally publishedYes

Keywords

  • Bipolar analog integrated circuits
  • circuit modeling
  • displacement damage
  • total non-ionizing dose
  • transient radiation effects
  • transient response
  • X-ray effects

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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