Impact of low temperatures (< 125 K) on the total ionizing dose response and ELDRS in gated lateral PNP BJTs

Philippe C. Adell, Ivan S. Esqueda, Hugh Barnaby, Bernard Rax, Allan H. Johnston

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Total ionizing dose characteristics and dose rate dependence are evaluated under low temperature conditions for gated lateral PNP bipolar junction transistors. The results show that the dose rate sensitivity of the examined linear bipolar circuit technology is reduced when irradiations are performed at low temperature. The results are supported by numerical simulations that model low temperature behaviors through the suppression of hole and proton transport in the irradiated oxide. These findings agree well with previous studies of CMOS technologies, which reported on the time and bias dependence of defect buildup in MOS capacitors and transistors. This study of temperature effects on the total dose and dose rate response of PNP BJTs expands upon these works by examining the impact of low temperature on ELDRS in bipolar technologies.

Original languageEnglish (US)
Article number6365385
Pages (from-to)3081-3086
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume59
Issue number6
DOIs
StatePublished - Dec 26 2012

Keywords

  • Cryogenic
  • ELDRS
  • gated lateral PNP
  • hole transport
  • total dose
  • yield

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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