Abstract

Electroluminescence refrigeration in light emitting diodes is studied by taking into account carrier transport, carrier recombination, and influence of the dimensionality of electronic density of states (DOS) in active region. The cooling process happens when carriers transport from the metal contacts to the barrier layers. For a given bias voltage, the cooling power density decreases monotonically with the dimension of the DOS and increases as the carrier effective masses increases.

Original languageEnglish (US)
Pages (from-to)1387-1390
Number of pages4
JournalSolid-State Electronics
Volume51
Issue number10 SPEC. ISS
DOIs
StatePublished - Oct 2007

Keywords

  • Density of states
  • Electroluminescence refrigeration
  • Semiconductor optical refrigeration
  • Thermoelectric cooling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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