Impact of delta-doping position on photoluminescence in type-II InAs/GaAsSb quantum dots

Yeongho Kim, Keun Yong Ban, Darius Kuciauskas, Patricia C. Dippo, Christiana Honsberg

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We studied the optical properties of InAs/GaAs0.83Sb0.17 quantum dots (QDs), with varying silicon delta-doping position (spatial distance, d=0.5, 1, and 2 nm), using photoluminescence (PL) measurements. Compared with the undoped QDs, the PL peak energies of the ground state (GS) emissions for the doped QDs with d=0.5 and 2 nm were found to be greatly blueshifted by ∼31 meV, which was much larger than that for the doped QDs with d=1 nm. The radiative recombination rate of the GS emissions for the doped QDs with d=1 nm was estimated to be slower than that for the other doped QDs at 10 K. The doped QDs with d=1 nm showed the fastest redshift of the GS peak energy with temperature and lowest thermal activation energy (151 meV) of electrons among the QD samples. Further, the time-resolved PL data revealed that the average carrier lifetime (6.3 ns) in the doped QDs with d=1 nm was longer even than that in the undoped QDs (5.5 ns) because of the weakened electron-hole wavefunction overlap by the V-shaped potential barrier in the doped QDs.

Original languageEnglish (US)
Article number035006
JournalSemiconductor Science and Technology
Volume30
Issue number3
DOIs
StatePublished - Mar 1 2015

Fingerprint

Semiconductor quantum dots
Photoluminescence
quantum dots
Doping (additives)
photoluminescence
Ground state
ground state
indium arsenide
Carrier lifetime
Electrons
Silicon
radiative recombination
carrier lifetime
Wave functions
Optical properties
Activation energy
activation energy
optical properties
energy
silicon

Keywords

  • delta-doping
  • InAs/GaAsSb
  • intermediate band solar cells
  • molecular beam epitaxy
  • quantum dots

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Impact of delta-doping position on photoluminescence in type-II InAs/GaAsSb quantum dots. / Kim, Yeongho; Ban, Keun Yong; Kuciauskas, Darius; Dippo, Patricia C.; Honsberg, Christiana.

In: Semiconductor Science and Technology, Vol. 30, No. 3, 035006, 01.03.2015.

Research output: Contribution to journalArticle

Kim, Yeongho ; Ban, Keun Yong ; Kuciauskas, Darius ; Dippo, Patricia C. ; Honsberg, Christiana. / Impact of delta-doping position on photoluminescence in type-II InAs/GaAsSb quantum dots. In: Semiconductor Science and Technology. 2015 ; Vol. 30, No. 3.
@article{c9e32debffe1441c8cd7170fee7cea4a,
title = "Impact of delta-doping position on photoluminescence in type-II InAs/GaAsSb quantum dots",
abstract = "We studied the optical properties of InAs/GaAs0.83Sb0.17 quantum dots (QDs), with varying silicon delta-doping position (spatial distance, d=0.5, 1, and 2 nm), using photoluminescence (PL) measurements. Compared with the undoped QDs, the PL peak energies of the ground state (GS) emissions for the doped QDs with d=0.5 and 2 nm were found to be greatly blueshifted by ∼31 meV, which was much larger than that for the doped QDs with d=1 nm. The radiative recombination rate of the GS emissions for the doped QDs with d=1 nm was estimated to be slower than that for the other doped QDs at 10 K. The doped QDs with d=1 nm showed the fastest redshift of the GS peak energy with temperature and lowest thermal activation energy (151 meV) of electrons among the QD samples. Further, the time-resolved PL data revealed that the average carrier lifetime (6.3 ns) in the doped QDs with d=1 nm was longer even than that in the undoped QDs (5.5 ns) because of the weakened electron-hole wavefunction overlap by the V-shaped potential barrier in the doped QDs.",
keywords = "delta-doping, InAs/GaAsSb, intermediate band solar cells, molecular beam epitaxy, quantum dots",
author = "Yeongho Kim and Ban, {Keun Yong} and Darius Kuciauskas and Dippo, {Patricia C.} and Christiana Honsberg",
year = "2015",
month = "3",
day = "1",
doi = "10.1088/0268-1242/30/3/035006",
language = "English (US)",
volume = "30",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "3",

}

TY - JOUR

T1 - Impact of delta-doping position on photoluminescence in type-II InAs/GaAsSb quantum dots

AU - Kim, Yeongho

AU - Ban, Keun Yong

AU - Kuciauskas, Darius

AU - Dippo, Patricia C.

AU - Honsberg, Christiana

PY - 2015/3/1

Y1 - 2015/3/1

N2 - We studied the optical properties of InAs/GaAs0.83Sb0.17 quantum dots (QDs), with varying silicon delta-doping position (spatial distance, d=0.5, 1, and 2 nm), using photoluminescence (PL) measurements. Compared with the undoped QDs, the PL peak energies of the ground state (GS) emissions for the doped QDs with d=0.5 and 2 nm were found to be greatly blueshifted by ∼31 meV, which was much larger than that for the doped QDs with d=1 nm. The radiative recombination rate of the GS emissions for the doped QDs with d=1 nm was estimated to be slower than that for the other doped QDs at 10 K. The doped QDs with d=1 nm showed the fastest redshift of the GS peak energy with temperature and lowest thermal activation energy (151 meV) of electrons among the QD samples. Further, the time-resolved PL data revealed that the average carrier lifetime (6.3 ns) in the doped QDs with d=1 nm was longer even than that in the undoped QDs (5.5 ns) because of the weakened electron-hole wavefunction overlap by the V-shaped potential barrier in the doped QDs.

AB - We studied the optical properties of InAs/GaAs0.83Sb0.17 quantum dots (QDs), with varying silicon delta-doping position (spatial distance, d=0.5, 1, and 2 nm), using photoluminescence (PL) measurements. Compared with the undoped QDs, the PL peak energies of the ground state (GS) emissions for the doped QDs with d=0.5 and 2 nm were found to be greatly blueshifted by ∼31 meV, which was much larger than that for the doped QDs with d=1 nm. The radiative recombination rate of the GS emissions for the doped QDs with d=1 nm was estimated to be slower than that for the other doped QDs at 10 K. The doped QDs with d=1 nm showed the fastest redshift of the GS peak energy with temperature and lowest thermal activation energy (151 meV) of electrons among the QD samples. Further, the time-resolved PL data revealed that the average carrier lifetime (6.3 ns) in the doped QDs with d=1 nm was longer even than that in the undoped QDs (5.5 ns) because of the weakened electron-hole wavefunction overlap by the V-shaped potential barrier in the doped QDs.

KW - delta-doping

KW - InAs/GaAsSb

KW - intermediate band solar cells

KW - molecular beam epitaxy

KW - quantum dots

UR - http://www.scopus.com/inward/record.url?scp=84923881957&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84923881957&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/30/3/035006

DO - 10.1088/0268-1242/30/3/035006

M3 - Article

VL - 30

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 3

M1 - 035006

ER -