Semipolar (20 2 ¯ 1) plane InxGa1-xN quantum wells (QWs) of varying alloy composition were studied by time-resolved photoluminescence. A large difference in effective radiative lifetimes, from sub-ns for x = 0.11 to ∼30 ns for x ∼ 0.35 was found. This effect is attributed to different properties of carrier localization. In low In content QWs, recombination at extended states with short recombination times is prevalent. In QWs with a high In content, the lifetimes are increased by localization of electrons and holes at separate sites. The zigzag shape of the QW interfaces and the resulting in-plane electric field are proposed as the cause for the separate electron and hole localization.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)