Impact of carrier localization on radiative recombination times in semipolar (20 2 ¯ 1) plane InGaN/GaN quantum wells

R. Ivanov; S. Marcinkevičius; Y. Zhao; D. L. Becerra; S. Nakamura; S. P. DenBaars; J. S. Speck

doi:10.1063/1.4936386

Impact of carrier localization on radiative recombination times in semipolar (20 2 ¯ 1) plane InGaN/GaN quantum wells

R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, J. S. Speck

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Semipolar (20 2 ¯ 1) plane In_xGa_1-xN quantum wells (QWs) of varying alloy composition were studied by time-resolved photoluminescence. A large difference in effective radiative lifetimes, from sub-ns for x = 0.11 to ∼30 ns for x ∼ 0.35 was found. This effect is attributed to different properties of carrier localization. In low In content QWs, recombination at extended states with short recombination times is prevalent. In QWs with a high In content, the lifetimes are increased by localization of electrons and holes at separate sites. The zigzag shape of the QW interfaces and the resulting in-plane electric field are proposed as the cause for the separate electron and hole localization.

Original language	English (US)
Article number	211109
Journal	Applied Physics Letters
Volume	107
Issue number	21
DOIs	https://doi.org/10.1063/1.4936386
State	Published - Nov 23 2015
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Impact of carrier localization on radiative recombination times in semipolar (20 2 ¯ 1) plane InGaN/GaN quantum wells",

abstract = "Semipolar (20 2 ¯ 1) plane InxGa1-xN quantum wells (QWs) of varying alloy composition were studied by time-resolved photoluminescence. A large difference in effective radiative lifetimes, from sub-ns for x = 0.11 to ∼30 ns for x ∼ 0.35 was found. This effect is attributed to different properties of carrier localization. In low In content QWs, recombination at extended states with short recombination times is prevalent. In QWs with a high In content, the lifetimes are increased by localization of electrons and holes at separate sites. The zigzag shape of the QW interfaces and the resulting in-plane electric field are proposed as the cause for the separate electron and hole localization.",

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T1 - Impact of carrier localization on radiative recombination times in semipolar (20 2 ¯ 1) plane InGaN/GaN quantum wells

AU - Ivanov, R.

AU - Marcinkevičius, S.

AU - Zhao, Y.

AU - Becerra, D. L.

AU - Nakamura, S.

AU - DenBaars, S. P.

AU - Speck, J. S.

PY - 2015/11/23

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N2 - Semipolar (20 2 ¯ 1) plane InxGa1-xN quantum wells (QWs) of varying alloy composition were studied by time-resolved photoluminescence. A large difference in effective radiative lifetimes, from sub-ns for x = 0.11 to ∼30 ns for x ∼ 0.35 was found. This effect is attributed to different properties of carrier localization. In low In content QWs, recombination at extended states with short recombination times is prevalent. In QWs with a high In content, the lifetimes are increased by localization of electrons and holes at separate sites. The zigzag shape of the QW interfaces and the resulting in-plane electric field are proposed as the cause for the separate electron and hole localization.

AB - Semipolar (20 2 ¯ 1) plane InxGa1-xN quantum wells (QWs) of varying alloy composition were studied by time-resolved photoluminescence. A large difference in effective radiative lifetimes, from sub-ns for x = 0.11 to ∼30 ns for x ∼ 0.35 was found. This effect is attributed to different properties of carrier localization. In low In content QWs, recombination at extended states with short recombination times is prevalent. In QWs with a high In content, the lifetimes are increased by localization of electrons and holes at separate sites. The zigzag shape of the QW interfaces and the resulting in-plane electric field are proposed as the cause for the separate electron and hole localization.

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Impact of carrier localization on radiative recombination times in semipolar (20 2 ¯ 1) plane InGaN/GaN quantum wells

Abstract

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