Impact of carrier localization on radiative recombination times in semipolar (20 2 ¯ 1) plane InGaN/GaN quantum wells

R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, J. S. Speck

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Semipolar (20 2 ¯ 1) plane InxGa1-xN quantum wells (QWs) of varying alloy composition were studied by time-resolved photoluminescence. A large difference in effective radiative lifetimes, from sub-ns for x = 0.11 to ∼30 ns for x ∼ 0.35 was found. This effect is attributed to different properties of carrier localization. In low In content QWs, recombination at extended states with short recombination times is prevalent. In QWs with a high In content, the lifetimes are increased by localization of electrons and holes at separate sites. The zigzag shape of the QW interfaces and the resulting in-plane electric field are proposed as the cause for the separate electron and hole localization.

Original languageEnglish (US)
Article number211109
JournalApplied Physics Letters
Volume107
Issue number21
DOIs
StatePublished - Nov 23 2015
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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