Impact of carrier localization on radiative recombination times in semipolar (20 2 ¯ 1) plane InGaN/GaN quantum wells

R. Ivanov; S. Marcinkevičius; Y. Zhao; D. L. Becerra; S. Nakamura; S. P. DenBaars; J. S. Speck

doi:10.1063/1.4936386

Impact of carrier localization on radiative recombination times in semipolar (20 2 ¯ 1) plane InGaN/GaN quantum wells

R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, J. S. Speck

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Semipolar (20 2 ¯ 1) plane In_xGa_1-xN quantum wells (QWs) of varying alloy composition were studied by time-resolved photoluminescence. A large difference in effective radiative lifetimes, from sub-ns for x = 0.11 to ∼30 ns for x ∼ 0.35 was found. This effect is attributed to different properties of carrier localization. In low In content QWs, recombination at extended states with short recombination times is prevalent. In QWs with a high In content, the lifetimes are increased by localization of electrons and holes at separate sites. The zigzag shape of the QW interfaces and the resulting in-plane electric field are proposed as the cause for the separate electron and hole localization.

Original language	English (US)
Article number	211109
Journal	Applied Physics Letters
Volume	107
Issue number	21
DOIs	https://doi.org/10.1063/1.4936386
State	Published - Nov 23 2015
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4936386

Cite this

@article{f229d3ff0a9e409384a5822909a5e163,

title = "Impact of carrier localization on radiative recombination times in semipolar (20 2 ¯ 1) plane InGaN/GaN quantum wells",

abstract = "Semipolar (20 2 ¯ 1) plane InxGa1-xN quantum wells (QWs) of varying alloy composition were studied by time-resolved photoluminescence. A large difference in effective radiative lifetimes, from sub-ns for x = 0.11 to ∼30 ns for x ∼ 0.35 was found. This effect is attributed to different properties of carrier localization. In low In content QWs, recombination at extended states with short recombination times is prevalent. In QWs with a high In content, the lifetimes are increased by localization of electrons and holes at separate sites. The zigzag shape of the QW interfaces and the resulting in-plane electric field are proposed as the cause for the separate electron and hole localization.",

author = "R. Ivanov and S. Marcinkevi{\v c}ius and Y. Zhao and Becerra, {D. L.} and S. Nakamura and DenBaars, {S. P.} and Speck, {J. S.}",

year = "2015",

month = nov,

day = "23",

doi = "10.1063/1.4936386",

language = "English (US)",

volume = "107",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "21",

}

TY - JOUR

T1 - Impact of carrier localization on radiative recombination times in semipolar (20 2 ¯ 1) plane InGaN/GaN quantum wells

AU - Ivanov, R.

AU - Marcinkevičius, S.

AU - Zhao, Y.

AU - Becerra, D. L.

AU - Nakamura, S.

AU - DenBaars, S. P.

AU - Speck, J. S.

PY - 2015/11/23

Y1 - 2015/11/23

N2 - Semipolar (20 2 ¯ 1) plane InxGa1-xN quantum wells (QWs) of varying alloy composition were studied by time-resolved photoluminescence. A large difference in effective radiative lifetimes, from sub-ns for x = 0.11 to ∼30 ns for x ∼ 0.35 was found. This effect is attributed to different properties of carrier localization. In low In content QWs, recombination at extended states with short recombination times is prevalent. In QWs with a high In content, the lifetimes are increased by localization of electrons and holes at separate sites. The zigzag shape of the QW interfaces and the resulting in-plane electric field are proposed as the cause for the separate electron and hole localization.

AB - Semipolar (20 2 ¯ 1) plane InxGa1-xN quantum wells (QWs) of varying alloy composition were studied by time-resolved photoluminescence. A large difference in effective radiative lifetimes, from sub-ns for x = 0.11 to ∼30 ns for x ∼ 0.35 was found. This effect is attributed to different properties of carrier localization. In low In content QWs, recombination at extended states with short recombination times is prevalent. In QWs with a high In content, the lifetimes are increased by localization of electrons and holes at separate sites. The zigzag shape of the QW interfaces and the resulting in-plane electric field are proposed as the cause for the separate electron and hole localization.

UR - http://www.scopus.com/inward/record.url?scp=84948451946&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84948451946&partnerID=8YFLogxK

U2 - 10.1063/1.4936386

DO - 10.1063/1.4936386

M3 - Article

AN - SCOPUS:84948451946

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

M1 - 211109

ER -

Impact of carrier localization on radiative recombination times in semipolar (20 2 ¯ 1) plane InGaN/GaN quantum wells

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this