Impact of Bi incorporation on the evolution of microstructure during growth of low-Temperature GaAs:Bi/Ga(As,Bi) layers

E. Luna, M. Wu, T. Aoki, M. R. McCartney, J. Puustinen, J. Hilska, M. Guina, D. J. Smith, A. Trampert

Research output: Contribution to journalArticle

Abstract

Complex morphology is observed in the GaAs:Bi cap layer of Ga(As,Bi) films grown on GaAs(001) substrates by low-Temperature (LT) molecular beam epitaxy (MBE). The microstructure is dominated by the presence of V-shaped domains in the LT-GaAs cap layer and by the (unintentional) inhomogeneous incorporation of Bi from the underlying Ga(As,Bi) layer growth. Aberration-corrected scanning transmission electron microscopy techniques enabled two types of domain to be identified: (i) twinned domains and (ii) Bi-rich atomically ordered domains with triple periodicity. The observed microstructure is discussed in the context of LT-MBE growth in combination with the presence of a small amount of Bi, which seemingly alters adatom diffusivity. Surface processes and (surface) kinetic factors play a key role in the resultant morphology and explain the appearance of both types of domains.

Original languageEnglish (US)
Article number085305
JournalJournal of Applied Physics
Volume126
Issue number8
DOIs
StatePublished - Aug 28 2019
Externally publishedYes

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microstructure
caps
molecular beam epitaxy
adatoms
diffusivity
aberration
periodic variations
transmission electron microscopy
scanning electron microscopy
kinetics

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Impact of Bi incorporation on the evolution of microstructure during growth of low-Temperature GaAs:Bi/Ga(As,Bi) layers. / Luna, E.; Wu, M.; Aoki, T.; McCartney, M. R.; Puustinen, J.; Hilska, J.; Guina, M.; Smith, D. J.; Trampert, A.

In: Journal of Applied Physics, Vol. 126, No. 8, 085305, 28.08.2019.

Research output: Contribution to journalArticle

Luna, E. ; Wu, M. ; Aoki, T. ; McCartney, M. R. ; Puustinen, J. ; Hilska, J. ; Guina, M. ; Smith, D. J. ; Trampert, A. / Impact of Bi incorporation on the evolution of microstructure during growth of low-Temperature GaAs:Bi/Ga(As,Bi) layers. In: Journal of Applied Physics. 2019 ; Vol. 126, No. 8.
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AU - Wu, M.

AU - Aoki, T.

AU - McCartney, M. R.

AU - Puustinen, J.

AU - Hilska, J.

AU - Guina, M.

AU - Smith, D. J.

AU - Trampert, A.

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