Impact of alpha particles on the electrical characteristics of TiO 2 memristors

Hugh Barnaby; S. Malley; M. Land; S. Charnicki; A. Kathuria; B. Wilkens; E. Deionno; W. M. Tong

doi:10.1109/TNS.2011.2168827

Impact of alpha particles on the electrical characteristics of TiO ₂ memristors

Hugh Barnaby, S. Malley, M. Land, S. Charnicki, A. Kathuria, B. Wilkens, E. Deionno, W. M. Tong

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

Titanium-oxide (TiO ₂ ) memristors exposed to 1-MeV alpha particles exhibit only minor changes in the electrical response for ion fluencies up to 10 ¹⁴cm ^{- 2}. At higher fluence levels, virgin and off-state devices exhibit measurable increases in current conduction between the two platinum (Pt) electrodes. Analysis, supported by radiation transport and numerical device simulations, suggests that radiation-induced displacement damage in the TiO ₂ film increases the density of oxygen vacancies, thereby altering both resistivity in the bulk of the transition-metal oxide and the junction characteristics of Pt-TiO ₂ interface. Nevertheless, the experimental results indicate continued switching functionality of the memristors even after exposure to 10 ¹⁵ cm ^{- 2} alpha particles. The high intrinsic vacancy density in the devices prior to radiation exposure is identified as the primary feature contributing to apparent radiation hardness.

Original language	English (US)
Article number	6061922
Pages (from-to)	2838-2844
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	58
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/TNS.2011.2168827
State	Published - Dec 2011

Keywords

Alpha particles
TiO
displacement damage
memristor

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TNS.2011.2168827

Cite this

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title = "Impact of alpha particles on the electrical characteristics of TiO 2 memristors",

abstract = "Titanium-oxide (TiO 2 ) memristors exposed to 1-MeV alpha particles exhibit only minor changes in the electrical response for ion fluencies up to 10 14cm - 2. At higher fluence levels, virgin and off-state devices exhibit measurable increases in current conduction between the two platinum (Pt) electrodes. Analysis, supported by radiation transport and numerical device simulations, suggests that radiation-induced displacement damage in the TiO 2 film increases the density of oxygen vacancies, thereby altering both resistivity in the bulk of the transition-metal oxide and the junction characteristics of Pt-TiO 2 interface. Nevertheless, the experimental results indicate continued switching functionality of the memristors even after exposure to 10 15 cm - 2 alpha particles. The high intrinsic vacancy density in the devices prior to radiation exposure is identified as the primary feature contributing to apparent radiation hardness.",

keywords = "Alpha particles, TiO, displacement damage, memristor",

author = "Hugh Barnaby and S. Malley and M. Land and S. Charnicki and A. Kathuria and B. Wilkens and E. Deionno and Tong, {W. M.}",

note = "Funding Information: Manuscript received July 20, 2011; revised August 28, 2011; accepted September 01, 2011. Date of publication October 26, 2011; date of current version December 14, 2011. This work was supported in part under The Aerospace Corporation{\textquoteright}s Mission Oriented Investigation and Experimentation program, funded by the U.S. Air Force Space and Missile Systems Center under Contract FA8802-09-C-0001. H. J. Barnaby, S. Malley, M. Land, S. Charnicki, and A. Kathuria are with the School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: hbarnaby@asu.edu). B. Wilkens is with the LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ 85287 USA E. DeIonno is with the Aerospace Corporation, El Segundo, CA 90245 USA. W. M. Tong is with TransEL Corporation, Albuquerque, NM 87111 USA. Digital Object Identifier 10.1109/TNS.2011.2168827",

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AU - Barnaby, Hugh

AU - Malley, S.

AU - Land, M.

AU - Charnicki, S.

AU - Kathuria, A.

AU - Wilkens, B.

AU - Deionno, E.

AU - Tong, W. M.

N1 - Funding Information: Manuscript received July 20, 2011; revised August 28, 2011; accepted September 01, 2011. Date of publication October 26, 2011; date of current version December 14, 2011. This work was supported in part under The Aerospace Corporation’s Mission Oriented Investigation and Experimentation program, funded by the U.S. Air Force Space and Missile Systems Center under Contract FA8802-09-C-0001. H. J. Barnaby, S. Malley, M. Land, S. Charnicki, and A. Kathuria are with the School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: hbarnaby@asu.edu). B. Wilkens is with the LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ 85287 USA E. DeIonno is with the Aerospace Corporation, El Segundo, CA 90245 USA. W. M. Tong is with TransEL Corporation, Albuquerque, NM 87111 USA. Digital Object Identifier 10.1109/TNS.2011.2168827

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N2 - Titanium-oxide (TiO 2 ) memristors exposed to 1-MeV alpha particles exhibit only minor changes in the electrical response for ion fluencies up to 10 14cm - 2. At higher fluence levels, virgin and off-state devices exhibit measurable increases in current conduction between the two platinum (Pt) electrodes. Analysis, supported by radiation transport and numerical device simulations, suggests that radiation-induced displacement damage in the TiO 2 film increases the density of oxygen vacancies, thereby altering both resistivity in the bulk of the transition-metal oxide and the junction characteristics of Pt-TiO 2 interface. Nevertheless, the experimental results indicate continued switching functionality of the memristors even after exposure to 10 15 cm - 2 alpha particles. The high intrinsic vacancy density in the devices prior to radiation exposure is identified as the primary feature contributing to apparent radiation hardness.

AB - Titanium-oxide (TiO 2 ) memristors exposed to 1-MeV alpha particles exhibit only minor changes in the electrical response for ion fluencies up to 10 14cm - 2. At higher fluence levels, virgin and off-state devices exhibit measurable increases in current conduction between the two platinum (Pt) electrodes. Analysis, supported by radiation transport and numerical device simulations, suggests that radiation-induced displacement damage in the TiO 2 film increases the density of oxygen vacancies, thereby altering both resistivity in the bulk of the transition-metal oxide and the junction characteristics of Pt-TiO 2 interface. Nevertheless, the experimental results indicate continued switching functionality of the memristors even after exposure to 10 15 cm - 2 alpha particles. The high intrinsic vacancy density in the devices prior to radiation exposure is identified as the primary feature contributing to apparent radiation hardness.

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