Abstract

Silicon metal-semiconductor FETs (MESFETs) have been fabricated using a 32-nm silicon-on-insulator (SOI) CMOS technology. The MESFET gates are formed during the self-aligned silicide step and show almost ideal Schottky behavior at low drain voltages. However, an anomalous peak in the reverse gate leakage current appears for drain voltages ≥2 V. The anomalous gate current is attributed to impact ionization generating excess holes that exit the channel through the Schottky contact. An analytical model is used to extract the electron impact ionization rate, α, which agrees with three earlier data sets over nearly four orders of magnitude.

Original languageEnglish (US)
Article number7556362
Pages (from-to)4143-4146
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume63
Issue number10
DOIs
StatePublished - Oct 2016

Keywords

  • Impact ionization
  • Schottky junction
  • metal-semiconductor FETs (MESFETs)
  • partially depleted (PD)
  • silicon-on-insulator (SOI)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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