Abstract

Silicon metal-semiconductor FETs (MESFETs) have been fabricated using a 32-nm silicon-on-insulator (SOI) CMOS technology. The MESFET gates are formed during the self-aligned silicide step and show almost ideal Schottky behavior at low drain voltages. However, an anomalous peak in the reverse gate leakage current appears for drain voltages ≥q 2 V. The anomalous gate current is attributed to impact ionization generating excess holes that exit the channel through the Schottky contact. An analytical model is used to extract the electron impact ionization rate, α, which agrees with three earlier data sets over nearly four orders of magnitude.

Original languageEnglish (US)
Article number7556362
JournalIEEE Transactions on Electron Devices
VolumePP
Issue number99
DOIs
StatePublished - 2016

Fingerprint

Impact ionization
Silicon
Field effect transistors
Metals
Semiconductor materials
Electric potential
Leakage currents
Analytical models
Electrons

Keywords

  • Impact ionization
  • metal-semiconductor FETs (MESFETs)
  • partially depleted (PD)
  • Schottky junction
  • Silicon-On-Insulator (SOI)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Impact Ionization in SOI MESFETs at the 32-nm Node. / Thornton, Trevor; Lepkowski, William; Wilk, Seth J.

In: IEEE Transactions on Electron Devices, Vol. PP, No. 99, 7556362, 2016.

Research output: Contribution to journalArticle

Thornton, Trevor ; Lepkowski, William ; Wilk, Seth J. / Impact Ionization in SOI MESFETs at the 32-nm Node. In: IEEE Transactions on Electron Devices. 2016 ; Vol. PP, No. 99.
@article{afb08ce8981b40b2bf94d5b59ddbd30c,
title = "Impact Ionization in SOI MESFETs at the 32-nm Node",
abstract = "Silicon metal-semiconductor FETs (MESFETs) have been fabricated using a 32-nm silicon-on-insulator (SOI) CMOS technology. The MESFET gates are formed during the self-aligned silicide step and show almost ideal Schottky behavior at low drain voltages. However, an anomalous peak in the reverse gate leakage current appears for drain voltages ≥q 2 V. The anomalous gate current is attributed to impact ionization generating excess holes that exit the channel through the Schottky contact. An analytical model is used to extract the electron impact ionization rate, α, which agrees with three earlier data sets over nearly four orders of magnitude.",
keywords = "Impact ionization, metal-semiconductor FETs (MESFETs), partially depleted (PD), Schottky junction, Silicon-On-Insulator (SOI)",
author = "Trevor Thornton and William Lepkowski and Wilk, {Seth J.}",
year = "2016",
doi = "10.1109/TED.2016.2601241",
language = "English (US)",
volume = "PP",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "99",

}

TY - JOUR

T1 - Impact Ionization in SOI MESFETs at the 32-nm Node

AU - Thornton, Trevor

AU - Lepkowski, William

AU - Wilk, Seth J.

PY - 2016

Y1 - 2016

N2 - Silicon metal-semiconductor FETs (MESFETs) have been fabricated using a 32-nm silicon-on-insulator (SOI) CMOS technology. The MESFET gates are formed during the self-aligned silicide step and show almost ideal Schottky behavior at low drain voltages. However, an anomalous peak in the reverse gate leakage current appears for drain voltages ≥q 2 V. The anomalous gate current is attributed to impact ionization generating excess holes that exit the channel through the Schottky contact. An analytical model is used to extract the electron impact ionization rate, α, which agrees with three earlier data sets over nearly four orders of magnitude.

AB - Silicon metal-semiconductor FETs (MESFETs) have been fabricated using a 32-nm silicon-on-insulator (SOI) CMOS technology. The MESFET gates are formed during the self-aligned silicide step and show almost ideal Schottky behavior at low drain voltages. However, an anomalous peak in the reverse gate leakage current appears for drain voltages ≥q 2 V. The anomalous gate current is attributed to impact ionization generating excess holes that exit the channel through the Schottky contact. An analytical model is used to extract the electron impact ionization rate, α, which agrees with three earlier data sets over nearly four orders of magnitude.

KW - Impact ionization

KW - metal-semiconductor FETs (MESFETs)

KW - partially depleted (PD)

KW - Schottky junction

KW - Silicon-On-Insulator (SOI)

UR - http://www.scopus.com/inward/record.url?scp=85027330738&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027330738&partnerID=8YFLogxK

U2 - 10.1109/TED.2016.2601241

DO - 10.1109/TED.2016.2601241

M3 - Article

AN - SCOPUS:85027330738

VL - PP

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 99

M1 - 7556362

ER -