Impact Ionization in SOI MESFETs at the 32-nm Node

Trevor Thornton, William Lepkowski, Seth J. Wilk

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

Silicon metal-semiconductor FETs (MESFETs) have been fabricated using a 32-nm silicon-on-insulator (SOI) CMOS technology. The MESFET gates are formed during the self-aligned silicide step and show almost ideal Schottky behavior at low drain voltages. However, an anomalous peak in the reverse gate leakage current appears for drain voltages ≥q 2 V. The anomalous gate current is attributed to impact ionization generating excess holes that exit the channel through the Schottky contact. An analytical model is used to extract the electron impact ionization rate, α, which agrees with three earlier data sets over nearly four orders of magnitude.

Original languageEnglish (US)
Article number7556362
JournalIEEE Transactions on Electron Devices
VolumePP
Issue number99
DOIs
StatePublished - 2016

Fingerprint

Impact ionization
Silicon
Field effect transistors
Metals
Semiconductor materials
Electric potential
Leakage currents
Analytical models
Electrons

Keywords

  • Impact ionization
  • metal-semiconductor FETs (MESFETs)
  • partially depleted (PD)
  • Schottky junction
  • Silicon-On-Insulator (SOI)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Impact Ionization in SOI MESFETs at the 32-nm Node. / Thornton, Trevor; Lepkowski, William; Wilk, Seth J.

In: IEEE Transactions on Electron Devices, Vol. PP, No. 99, 7556362, 2016.

Research output: Contribution to journal › Article

Thornton, T, Lepkowski, W & Wilk, SJ 2016, 'Impact Ionization in SOI MESFETs at the 32-nm Node', IEEE Transactions on Electron Devices, vol. PP, no. 99, 7556362. https://doi.org/10.1109/TED.2016.2601241
Thornton T, Lepkowski W, Wilk SJ. Impact Ionization in SOI MESFETs at the 32-nm Node. IEEE Transactions on Electron Devices. 2016;PP(99). 7556362. https://doi.org/10.1109/TED.2016.2601241
Thornton, Trevor ; Lepkowski, William ; Wilk, Seth J. / Impact Ionization in SOI MESFETs at the 32-nm Node. In: IEEE Transactions on Electron Devices. 2016 ; Vol. PP, No. 99.
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