Impact ionization in silicon dioxide

D. K. Ferry

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The dielectric strength of silicon dioxide is related to the breakdown field at which electron-hole pairs can be generated by inverse Auger scattering of hot electrons. This field is calculated to be about 3 × 107 V/cm for a 300°K ambient oxide.

Original languageEnglish (US)
Pages (from-to)1051-1053
Number of pages3
JournalSolid State Communications
Volume18
Issue number8
DOIs
StatePublished - 1976
Externally publishedYes

Fingerprint

Impact ionization
Hot electrons
hot electrons
Silicon Dioxide
Oxides
breakdown
Silica
Scattering
silicon dioxide
ionization
oxides
Electrons
scattering

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Impact ionization in silicon dioxide. / Ferry, D. K.

In: Solid State Communications, Vol. 18, No. 8, 1976, p. 1051-1053.

Research output: Contribution to journalArticle

Ferry, D. K. / Impact ionization in silicon dioxide. In: Solid State Communications. 1976 ; Vol. 18, No. 8. pp. 1051-1053.
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