Impact ionization in narrow gap semiconductors

R. C. Curby; D. K. Ferry

doi:10.1002/pssa.2210150136

Impact ionization in narrow gap semiconductors

R. C. Curby, D. K. Ferry

Arizona State University

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

The impact ionization generation rate in the narrow gap semiconductors InSb and InAs is calculated by a Monte Carlo procedure. The impact ionizing collision is treated as an additional scattering mechanism in calculating the transport parameters. Electron–electron scattering is included directly in addition to ionized impurity and polar optical phonon scattering. The results are compared with experimental data obtained for InSb and InAs of carrier concentrations in the range 10¹⁴ to 10¹⁶ cm⁻³. Agreement between theory and experiment is good with discrepancies being interpreted in terms of exact band non‐parabolicities and further carrier–carrier interactions.

Original language	English (US)
Pages (from-to)	319-328
Number of pages	10
Journal	physica status solidi (a)
Volume	15
Issue number	1
DOIs	https://doi.org/10.1002/pssa.2210150136
State	Published - Jan 16 1973

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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AB - The impact ionization generation rate in the narrow gap semiconductors InSb and InAs is calculated by a Monte Carlo procedure. The impact ionizing collision is treated as an additional scattering mechanism in calculating the transport parameters. Electron–electron scattering is included directly in addition to ionized impurity and polar optical phonon scattering. The results are compared with experimental data obtained for InSb and InAs of carrier concentrations in the range 1014 to 1016 cm−3. Agreement between theory and experiment is good with discrepancies being interpreted in terms of exact band non‐parabolicities and further carrier–carrier interactions.

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Impact ionization in narrow gap semiconductors

Abstract

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