Impact ionization in narrow gap semiconductors

R. C. Curby, D. K. Ferry

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

The impact ionization generation rate in the narrow gap semiconductors InSb and InAs is calculated by a Monte Carlo procedure. The impact ionizing collision is treated as an additional scattering mechanism in calculating the transport parameters. Electron–electron scattering is included directly in addition to ionized impurity and polar optical phonon scattering. The results are compared with experimental data obtained for InSb and InAs of carrier concentrations in the range 1014 to 1016 cm−3. Agreement between theory and experiment is good with discrepancies being interpreted in terms of exact band non‐parabolicities and further carrier–carrier interactions.

Original languageEnglish (US)
Pages (from-to)319-328
Number of pages10
Journalphysica status solidi (a)
Volume15
Issue number1
DOIs
StatePublished - Jan 16 1973

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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