IMPACT IONIZATION IN NARROW GAP SEMICONDUCTORS.

R. C. Curby, D. K. Ferry

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

The impact ionization generation rate in the narrow gap semiconductors InSb and InAs is calculated by a Monte Carlo procedure. The impact ionizing collison is treated as an additional scattering mechanism in calculating the transport parameters. Electron-electron scattering is included directly in addition to ionized impurity and polar optical phonon scattering. The results are compared with experimental data obtained for InSb and InAs of carrier concentrations in the range 10**1**4 to 10**1**6 cm** minus **3.

Original languageEnglish (US)
Pages (from-to)319-328
Number of pages10
JournalPhysica Status Solidi (A) Applied Research
Volume15
Issue number1
StatePublished - Jan 1973
Externally publishedYes

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Impact ionization
Phonon scattering
Electron scattering
Carrier concentration
Scattering
Impurities
Semiconductor materials
ionization
Electrons
scattering
electron scattering
impurities
electrons
indium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

IMPACT IONIZATION IN NARROW GAP SEMICONDUCTORS. / Curby, R. C.; Ferry, D. K.

In: Physica Status Solidi (A) Applied Research, Vol. 15, No. 1, 01.1973, p. 319-328.

Research output: Contribution to journalArticle

Curby, RC & Ferry, DK 1973, 'IMPACT IONIZATION IN NARROW GAP SEMICONDUCTORS.', Physica Status Solidi (A) Applied Research, vol. 15, no. 1, pp. 319-328.
Curby, R. C. ; Ferry, D. K. / IMPACT IONIZATION IN NARROW GAP SEMICONDUCTORS. In: Physica Status Solidi (A) Applied Research. 1973 ; Vol. 15, No. 1. pp. 319-328.
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