Abstract

The characterization of impact-ionization (II) and stress-induced damage in 28nm bulk n-channel MOSFETs is used to identify the mechanisms for carrier-induced interface trap generation (ITG) from 300 K to 77 K. The energy-driven paradigm of hot carrier effects is used to study carrier-induced ITG and its temperature dependence, and to analyze the influence of electron-electron scattering (EES) on carrier-induced degradation of ultra-short channel devices. The analysis clearly illustrates the significant role of EES in the hot (i.e., high-energy) carriers single particle (SP) mechanism of ITG, as well as its contribution to the cold (i.e., low-energy) carriers multiple particle (MP) mechanism of ITG. This is evidenced through extractions of ITG lifetime as a function of temperature and stress current from measurements of 28 nm n-channel devices. We apply a simple model to discuss the impact of EES on the experimentally observed trends for II and ITG rates.

Original languageEnglish (US)
JournalIEEE Transactions on Device and Materials Reliability
DOIs
StateAccepted/In press - Aug 11 2018

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Impact ionization
Electron scattering
Cryogenics
Electrons
Hot carriers
Temperature
Degradation

Keywords

  • aging effects
  • CMOS
  • cryogenic.
  • Degradation
  • Hot-carriers
  • Impact ionization
  • impact ionization
  • interface traps
  • low temperature
  • MOSFET
  • reliability
  • Stress
  • Temperature dependence
  • Temperature measurement
  • Voltage measurement

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

Cite this

Impact ionization and interface trap generation in 28nm MOSFETs at cryogenic temperatures. / Yan, Xiaodong; Wang, H.; Barnaby, Hugh; Esqueda, I. S.

In: IEEE Transactions on Device and Materials Reliability, 11.08.2018.

Research output: Contribution to journalArticle

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